公开(公告)号：US11867657B2

公开(公告)日：2024-01-09

申请号：US17767191

申请日：2020-10-01

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Mani Teja Vijjapu ,  Sandeep G. Surya ,  Saravanan Yuvaraja ,  Khaled Nabil Salama

IPC: G01N27/407 ,  G01N27/414 ,  G01N33/00

CPC classification number: G01N27/4075 ,  G01N27/4141 ,  G01N33/0037

Abstract: A gas sensor includes a gate electrode; a dielectric layer covering one surface of the gate electrode; an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively. The IGZO thin-film has an In concentration of 11%+/−3%, Ga concentration of 11%+/−3%, Zn concentration of 7%+/−3%, and O concentration of 71%+/−3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.