公开(公告)号：US20190154630A1

公开(公告)日：2019-05-23

申请号：US16236139

申请日：2018-12-28

申请人： Honeywell International Inc.

发明人： Cornel P. Cobianu ,  Bogdan-Catalin Serban ,  Viorel Georgel Dumitru ,  Octavian Buiu ,  Alisa Stratulat ,  Mihai Brezeanu

IPC分类号： G01N27/414 ,  G01N33/00 ,  H03F3/45 ,  H01L29/788 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： G01N27/4141 ,  G01N27/4146 ,  G01N27/4148 ,  G01N33/0047 ,  H01L29/0649 ,  H01L29/66977 ,  H01L29/7832 ,  H01L29/788 ,  H03F3/45179 ,  H03F2200/261

摘要： A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

公开(公告)号：US20180202960A1

公开(公告)日：2018-07-19

申请号：US15869943

申请日：2018-01-12

申请人： Hitachi, Ltd.

发明人： Kazuo ONO ,  Yoshitaka SASAGO

IPC分类号： G01N27/28 ,  H03F3/45 ,  H01L29/788 ,  G01N27/414 ,  H01L29/06 ,  H01L29/78

CPC分类号： G01N27/28 ,  G01N27/4141 ,  G01N27/4146 ,  G01N27/4148 ,  H01L29/0649 ,  H01L29/7832 ,  H01L29/788 ,  H03F3/45179

摘要： There is provided a field effect transistor type gas sensor, the gas sensor including a substrate, an oxide film on the substrate, a gate electrode on the oxide film, a body electrode which is disposed on the substrate, a first switch that changes a voltage which is applied to the gate electrode, and a second switch that changes a voltage which is applied to the body electrode. The gate electrode and the first switch are connected with each other through an electrical wire.

公开(公告)号：US09952175B2

公开(公告)日：2018-04-24

申请号：US15353028

申请日：2016-11-16

申请人： FUJITSU LIMITED

发明人： Satoru Momose ,  Osamu Tsuboi ,  Ikuo Soga

IPC分类号： H01L29/02 ,  G01N27/414 ,  G01N27/416 ,  C23C14/16 ,  C23C14/58 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/47 ,  G01N33/00

CPC分类号： G01N27/4141 ,  C23C14/16 ,  C23C14/5846 ,  G01N27/416 ,  G01N33/0054 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/242 ,  H01L29/47 ,  Y02A50/246

摘要： A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

公开(公告)号：US09935283B2

公开(公告)日：2018-04-03

申请号：US15235142

申请日：2016-08-12

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC分类号： H01L51/05 ,  H01L29/786 ,  H01L29/16 ,  H01L29/06 ,  H01L21/02 ,  H01L21/283 ,  H01L29/20 ,  H01L29/24 ,  H01L21/04 ,  H01L51/00 ,  H01L21/441 ,  H01L29/66 ,  H01L29/778 ,  G01N27/414 ,  H01L43/08 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L51/0541 ,  G01N27/414 ,  G01N27/4141 ,  G01N27/4146 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/02606 ,  H01L21/043 ,  H01L21/283 ,  H01L21/441 ,  H01L21/7682 ,  H01L23/53276 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/78696 ,  H01L43/08 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2221/1094

摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

公开(公告)号：US20180017521A1

公开(公告)日：2018-01-18

申请号：US15537966

申请日：2015-12-10

申请人： Robert Bosch GmbH

发明人： Denis Kunz ,  Martin Schreivogel

IPC分类号： G01N27/414

CPC分类号： G01N27/4141

摘要： A semiconductor-based gas sensor assembly for detecting a gas includes a gas-sensitive structure with a gas electrode, an electrode, and a dielectric layer, and also includes a readout transistor and a substrate. The dielectric layer is positioned between the gas electrode and the electrode, and is at least partially polarized. The readout transistor is positioned in or on the substrate, and includes a gate. The gas-sensitive structure is configured to form a capacitance that is coupled to the gate of the readout transistor.

公开(公告)号：US20180011052A1

公开(公告)日：2018-01-11

申请号：US15640796

申请日：2017-07-03

申请人： Volvo Car Corporation

发明人： Mike Andersson ,  Hossein Fashandi

IPC分类号： G01N27/414 ,  H01L21/04 ,  H01L29/16 ,  H01L29/45

CPC分类号： G01N27/4141 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/45

摘要： A field effect gas sensor, for detecting a presence of a gaseous substance in a gas mixture, the field effect gas sensor comprising: a SiC semiconductor structure; an electron insulating layer covering a first portion of the SiC semiconductor structure; a first contact structure at least partly separated from the SiC semiconductor structure by the electron insulating layer; and a second contact structure conductively connected to a second portion of the SiC semiconductor structure, wherein at least one of the electron insulating layer and the first contact structure is configured to interact with the gaseous substance to change an electrical property of the SiC semiconductor structure; and wherein the second contact structure comprises: an ohmic contact layer in direct contact with the second portion of the SiC semiconductor structure; and a barrier layer formed by an electrically conducting mid-transition-metal oxide covering the ohmic contact layer.

公开(公告)号：US09835583B2

公开(公告)日：2017-12-05

申请号：US14695205

申请日：2015-04-24

申请人： International Business Machines Corporation

发明人： Shu-Jen Han ,  Keith A. Jenkins

IPC分类号： G01N27/00 ,  G01N27/414 ,  G01N33/00

CPC分类号： G01N27/4141 ,  G01N27/4146 ,  G01N33/0075

摘要： A method of assembling a remote sensor system to detect a gas or chemical and a remote sensor system are described. The method includes fabricating a sensor, the sensor outputting a sensor signal that changes upon contact of the sensor with the gas or chemical and the sensor having an input port for a clock signal, coupling a capacitor to the sensor, the capacitor output voltage resulting from the sensor signal output by the sensor, and coupling a mixer to the capacitor and a low frequency oscillator, the mixer configured to mix the capacitor output voltage with the low frequency oscillator output to generate an output signal. The method also includes coupling an antenna to the mixer, the antenna configured to transmit the output signal indicating detection of the gas or chemical.

公开(公告)号：US20170328855A1

公开(公告)日：2017-11-16

申请号：US15594184

申请日：2017-05-12

申请人： Honeywell International Inc.

发明人： Cornel Cobianu ,  Alisa Stratulat ,  Bogdan Serban ,  Octavian Buiu ,  Cazimir Gabriel Bostan ,  Mihai Brezeanu ,  Stefan Dan Costea ,  Richard Davis

IPC分类号： G01N27/22 ,  H01L29/51 ,  H01L29/49

CPC分类号： G01N27/223 ,  G01N27/4141 ,  H01L29/4966 ,  H01L29/51

摘要： An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

公开(公告)号：US09664630B2

公开(公告)日：2017-05-30

申请号：US14110059

申请日：2012-02-15

申请人： Jun Bo Yoon ,  Hyun Ho Yang ,  Seok Ho Song

发明人： Jun Bo Yoon ,  Hyun Ho Yang ,  Seok Ho Song

IPC分类号： G01N27/04 ,  G01N27/414

CPC分类号： G01N27/048 ,  G01N27/4141

摘要： Disclosed is a humidity sensor including: a conductive material in which electric charges are charged; a charger which charges the electric charges in the conductive material; and a measurer which measures a change amount of the electric charges charged in the conductive material.

公开(公告)号：US20170067850A1

公开(公告)日：2017-03-09

申请号：US15353028

申请日：2016-11-16

申请人： FUJITSU LIMITED

发明人： Satoru Momose ,  Osamu Tsuboi ,  Ikuo Soga

IPC分类号： G01N27/414 ,  C23C14/58 ,  H01L29/47 ,  H01L29/16 ,  H01L29/20 ,  C23C14/16 ,  H01L29/24

CPC分类号： G01N27/4141 ,  C23C14/16 ,  C23C14/5846 ,  G01N27/416 ,  G01N33/0054 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/242 ,  H01L29/47 ,  Y02A50/246

摘要： A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

摘要翻译： 一种气体传感器，包括一个包括溴化铜（I）的第一层和一个设置在第一层上的第二层，是与溴化铜（I）不同的p型半导体，其中第一层 并且第二层比另一层更优选地与检测目标气体接触。