公开(公告)号：US11579537B2

公开(公告)日：2023-02-14

申请号：US17184442

申请日：2021-02-24

Applicant: KIOXIA CORPORATION

Inventor： Keiko Morishita ,  Kosuke Takai

IPC: G03F7/20 ,  H01L21/027

Abstract: According to one embodiment, a pattern inspection method includes detecting a region of a photomask having a pattern that differs from a corresponding design, acquiring an exposure focus shift information including an exposure focus shift amount of a portion of a substrate corresponding to the detected region of the photomask. The exposure focus shift amount for the detected region is acquired from the exposure focus shift information, and then a pass/fail determination for the detected region is performed based on an estimated pattern to be formed on the substrate.