公开(公告)号：US20210090633A1

公开(公告)日：2021-03-25

申请号：US16803260

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Rui ITO ,  Makoto MORIMOTO ,  Yutaka SHIMIZU ,  Ryuichi FUJIMOTO

IPC: G11C11/4074 ,  G11C11/408 ,  G11C11/4076 ,  G11C16/34 ,  G11C7/10

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of memory cells connected to a word line, a circuit configured to apply a voltage to the word line, a detection circuit configured to detect a first time difference from when a first signal of which a voltage is increased with a first slope is applied to the word line to when a current flows through the memory cells in response to applying the first signal, and a second time difference from when a second signal of which a voltage is increased with a second slope is applied to the word line to when a current flows through the memory cells in response to applying the second signal, the second slope being different from the first slope, and a determination circuit configured to determine a threshold voltage of the memory cells based on a difference between the first time difference and the second time difference.

公开(公告)号：US20220302817A1

公开(公告)日：2022-09-22

申请号：US17475498

申请日：2021-09-15

Applicant: Kioxia Corporation

Inventor： Makoto MORIMOTO ,  Rui ITO ,  Ryuichi FUJIMOTO

IPC: H02M1/00 ,  H02M3/158

Abstract: A power supply circuit has a first node, a second node, a DC-DC converter that includes a switched capacitor, generates an output voltage based on an input voltage supplied from the first node, and outputs the output voltage from the second node, and a regulator that is connected in parallel to the DC-DC converter between the first node and the second node and controls an output current flowing to the second node based on a reference voltage lower than the input voltage.