公开(公告)号：US20250146893A1

公开(公告)日：2025-05-08

申请号：US18936993

申请日：2024-11-04

Applicant: KLA CORPORATION

Inventor： Houssam Chouaib ,  Zhengquan Tan ,  Shova Subedi ,  Shankar Krishnan ,  David Y. Wang ,  Oleg Shulepov ,  Kevin Peterlinz ,  Natalia Malkova ,  Dawei Hu ,  Carlos Ygartua ,  Isvar Cordova ,  Eric Cheek ,  Roman Sappey ,  Anderson Chou

IPC: G01L1/24 ,  G01B11/06 ,  G01B11/24

Abstract: A workpiece is measured using multiple-pass spectroscopic ellipsometry and multi-wavelength Raman spectroscopy, which may be performed in the same system. These measurements are combined to form combined measured data. A stress measurement of the workpiece is determined using the combined measured data. The stress measurement can be determined using a model or a machine learning algorithm.

公开(公告)号：US11060982B2

公开(公告)日：2021-07-13

申请号：US16815362

申请日：2020-03-11

Applicant: KLA Corporation

Inventor： Natalia Malkova ,  Mikhail Sushchik ,  Dawei Hu ,  Carlos L. Ygartua

IPC: G01N21/95 ,  G01B11/06 ,  G01N21/956 ,  G06T7/00

Abstract: Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

公开(公告)号：US20200292467A1

公开(公告)日：2020-09-17

申请号：US16815362

申请日：2020-03-11

Applicant: KLA Corporation

Inventor： Natalia Malkova ,  Mikhail Sushchik ,  Dawei Hu ,  Carlos L. Ygartua

IPC: G01N21/95 ,  G01N21/956 ,  G01B11/06 ,  G06T7/00

Abstract: Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

公开(公告)号：US10770362B1

公开(公告)日：2020-09-08

申请号：US16529495

申请日：2019-08-01

Applicant: KLA Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

IPC: H01L21/66 ,  G01R31/28 ,  G01N21/27 ,  G01R31/308

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.