公开(公告)号：US20240250110A1

公开(公告)日：2024-07-25

申请号：US18404530

申请日：2024-01-04

Applicant: KLA Corporation

Inventor： Abbas Haddadi ,  Devis Contarato ,  John Fielden ,  Yung-Ho Alex Chuang

IPC: H01L27/148

CPC classification number: H01L27/14856

Abstract: Image sensors with a tunable floating diffusion (FD) structure for applications such as inspection and metrology are provided. One image sensor includes a sensing node electrically connected to circuits of the image sensor, formed on a first side of a silicon layer adjacent to the circuits, and formed by a Voltage-Controlled Variable Floating Diffusion (VCVFD) structure. The VCVFD structure includes a gate electrode configured to control a variable capacitance of the VCVFD structure via voltage applied to the gate electrode by an electrical connection to the gate electrode. The VCVFD structure converts a charge responsive to electron accumulation in the channel of the circuits to a voltage proportional to an amount of the charge and dependent on the variable capacitance. The VCVFD may also be implemented in an electron-sensor pixel configured for detecting electrons or x-rays as described further herein.