Monitoring changes in photomask defectivity

    公开(公告)号:US09892503B2

    公开(公告)日:2018-02-13

    申请号:US15344788

    申请日:2016-11-07

    Abstract: A reticle that is within specifications is inspected to generate baseline candidate defects and their location and size. After using the reticle in photolithography, the reticle is inspected to generate current candidate defects and their location and size. An inspection report of filtered candidate defects and their images is generated so that these candidate defects include a first subset of the current candidate defects and their images and exclude a second subset of the current candidate defects and their images. Each of the first subset of candidate defects has a location and size that fails to match any baseline candidate defect's location and size, and each of the excluded second subset of candidate defects has a location and size that matches a baseline candidate defect's location and size.

    Monitoring changes in photomask defectivity
    2.
    发明授权
    Monitoring changes in photomask defectivity 有权
    监控光掩模缺陷的变化

    公开(公告)号:US09518935B2

    公开(公告)日:2016-12-13

    申请号:US14278277

    申请日:2014-05-15

    Abstract: A reticle that is within specifications is inspected so as to generate a baseline event indicating a location and a size value for each unusual reticle feature. After using the reticle in photolithography, the reticle is inspected so as to generate a current event indicating a location and a size value for each unusual reticle feature. An inspection report of candidate defects and their images is generated so that these candidate defects include a first subset of the current events and their corresponding candidate defect images and exclude a second subset of the current events and their corresponding excluded images. Each of the first included events has a location and size value that fails to match any baseline event's location and size value, and each of the excluded second events has a location and size value that matches a baseline event's location and size value.

    Abstract translation: 检查在规格内的掩模版,以便生成指示每个异常掩模版特征的位置和尺寸值的基线事件。 在光刻中使用掩模版之后,检查掩模版以产生指示每个异常掩模版特征的位置和尺寸值的电流事件。 生成候选缺陷及其图像的检查报告,使得这些候选缺陷包括当前事件的第一子集及其对应的候选缺陷图像,并排除当前事件的第二子集及其对应的排除图像。 每个第一个包含的事件都有一个位置和大小值,无法匹配任何基线事件的位置和大小值,并且每个排除的第二个事件具有与基准事件的位置和大小值相匹配的位置和大小值。

    MONITORING CHANGES IN PHOTOMASK DEFECTIVITY
    3.
    发明申请
    MONITORING CHANGES IN PHOTOMASK DEFECTIVITY 有权
    监测光照缺陷的变化

    公开(公告)号:US20170053395A1

    公开(公告)日:2017-02-23

    申请号:US15344788

    申请日:2016-11-07

    Abstract: A reticle that is within specifications is inspected to generate baseline candidate defects and their location and size. After using the reticle in photolithography, the reticle is inspected to generate current candidate defects and their location and size. An inspection report of filtered candidate defects and their images is generated so that these candidate defects include a first subset of the current candidate defects and their images and exclude a second subset of the current candidate defects and their images. Each of the first subset of candidate defects has a location and size that fails to match any baseline candidate defect's location and size, and each of the excluded second subset of candidate defects has a location and size that matches a baseline candidate defect's location and size.

    Abstract translation: 检查规格内的掩模版,以生成基线候选缺陷及其位置和大小。 在光刻中使用掩模版之后,检查掩模版以产生当前候选缺陷及其位置和尺寸。 生成滤波候选缺陷及其图像的检查报告,使得这些候选缺陷包括当前候选缺陷及其图像的第一子集,并排除当前候选缺陷及其图像的第二子集。 候选缺陷的第一子集中的每一个具有不匹配任何基线候选缺陷的位置和大小的位置和大小,并且排除的候选缺陷的第二子集中的每一个具有与基线候选缺陷的位置和大小相匹配的位置和大小。

    MONITORING CHANGES IN PHOTOMASK DEFECTIVITY
    4.
    发明申请
    MONITORING CHANGES IN PHOTOMASK DEFECTIVITY 有权
    监测光照缺陷的变化

    公开(公告)号:US20150029498A1

    公开(公告)日:2015-01-29

    申请号:US14278277

    申请日:2014-05-15

    Abstract: A reticle that is within specifications is inspected so as to generate a baseline event indicating a location and a size value for each unusual reticle feature. After using the reticle in photolithography, the reticle is inspected so as to generate a current event indicating a location and a size value for each unusual reticle feature. An inspection report of candidate defects and their images is generated so that these candidate defects include a first subset of the current events and their corresponding candidate defect images and exclude a second subset of the current events and their corresponding excluded images. Each of the first included events has a location and size value that fails to match any baseline event's location and size value, and each of the excluded second events has a location and size value that matches a baseline event's location and size value.

    Abstract translation: 检查在规格内的掩模版,以便生成指示每个异常掩模版特征的位置和尺寸值的基线事件。 在光刻中使用掩模版之后,检查掩模版以产生指示每个异常掩模版特征的位置和尺寸值的电流事件。 生成候选缺陷及其图像的检查报告,使得这些候选缺陷包括当前事件的第一子集及其对应的候选缺陷图像,并排除当前事件的第二子集及其对应的排除图像。 每个第一个包含的事件都有一个位置和大小值,无法匹配任何基线事件的位置和大小值,并且每个排除的第二个事件具有与基准事件的位置和大小值相匹配的位置和大小值。

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