Detecting IC Reliability Defects
    1.
    发明申请
    Detecting IC Reliability Defects 审中-公开
    检测IC可靠性缺陷

    公开(公告)号:US20150120220A1

    公开(公告)日:2015-04-30

    申请号:US14512446

    申请日:2014-10-12

    CPC classification number: H01L22/12 G01N21/8851 G01N21/956 H01L22/14 H01L22/20

    Abstract: Methods and systems for detecting reliability defects on a wafer are provided. One method includes acquiring output for a wafer generated by an inspection system. The method also includes determining one or more geometric characteristics of one or more patterned features formed on the wafer based on the output. In addition, the method includes identifying which of the one or more patterned features will cause one or more reliability defects in a device being formed on the wafer based on the determined one or more characteristics.

    Abstract translation: 提供了用于检测晶片上的可靠性缺陷的方法和系统。 一种方法包括获取由检查系统产生的晶片的输出。 该方法还包括基于输出来确定在晶片上形成的一个或多个图案特征的一个或多个几何特征。 此外,该方法包括基于所确定的一个或多个特性来识别一个或多个图案化特征中的哪一个将导致在晶片上形成的器件中的一个或多个可靠性缺陷。

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