Model-based registration and critical dimension metrology
    1.
    发明授权
    Model-based registration and critical dimension metrology 有权
    基于模型的注册和关键维度计量学

    公开(公告)号:US09311700B2

    公开(公告)日:2016-04-12

    申请号:US14032309

    申请日:2013-09-20

    CPC classification number: G06T7/001 G06T2207/10056 G06T2207/30148

    Abstract: A method and system for performing model-based registration and critical dimension measurement is disclosed. The method includes: utilizing an imaging device to obtain at least one optical image of a measurement site specified for a photomask; retrieving a design of photomask and utilizing a computer model of the imaging device to generate at least one simulated image of the measurement site; adjusting at least one parameter of the computer model to minimize dissimilarities between the simulated images and the optical images, wherein the parameters includes at least a pattern registration parameter or a critical dimension parameter; and reporting the pattern registration parameter or the critical dimension parameter of the computer model when dissimilarities between the simulated images and the optical images are minimized.

    Abstract translation: 公开了一种用于执行基于模型的注册和关键维度测量的方法和系统。 该方法包括:利用成像装置获得为光掩模指定的测量部位的至少一个光学图像; 检索光掩模的设计并利用所述成像装置的计算机模型来生成所述测量部位的至少一个模拟图像; 调整所述计算机模型的至少一个参数以最小化所述模拟图像与所述光学图像之间的不相似性,其中所述参数至少包括模式注册参数或临界尺寸参数; 并且当模拟图像和光学图像之间的不相似度最小化时报告计算机模型的模式注册参数或临界尺寸参数。

    System and method for switching between an EUV pellicle and an optical pellicle

    公开(公告)号:US11156927B1

    公开(公告)日:2021-10-26

    申请号:US15961267

    申请日:2018-04-24

    Abstract: A system for switching between an optical pellicle and an EUV pellicle includes one or more inspection tools configured to perform one or more inspection processes on a mask. The system includes one or more extreme ultraviolet (EUV) lithography tools configured to perform one or more lithographic exposures on the mask. The system includes a dual pellicle handler operatively coupled to the one or more inspection tools and the one or more EUV lithography tools, wherein the dual pellicle handler is configured to attach at least one of an optical pellicle or an EUV pellicle to the mask, wherein the dual pellicle handler is configured to detach at least one of the optical pellicle or the EUV pellicle from the mask.

    Apparatus and methods for inspecting reticles

    公开(公告)号:US10395361B2

    公开(公告)日:2019-08-27

    申请号:US15803628

    申请日:2017-11-03

    Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field is recovered for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle. The recovered reticle near field is then used to determine whether the test reticle or another reticle will likely result in unstable wafer pattern or a defective wafer.

    Model-Based Registration and Critical Dimension Metrology
    5.
    发明申请
    Model-Based Registration and Critical Dimension Metrology 有权
    基于模型的注册和关键维度计量学

    公开(公告)号:US20140086475A1

    公开(公告)日:2014-03-27

    申请号:US14032309

    申请日:2013-09-20

    CPC classification number: G06T7/001 G06T2207/10056 G06T2207/30148

    Abstract: A method and system for performing model-based registration and critical dimension measurement is disclosed. The method includes: utilizing an imaging device to obtain at least one optical image of a measurement site specified for a photomask; retrieving a design of photomask and utilizing a computer model of the imaging device to generate at least one simulated image of the measurement site; adjusting at least one parameter of the computer model to minimize dissimilarities between the simulated images and the optical images, wherein the parameters includes at least a pattern registration parameter or a critical dimension parameter; and reporting the pattern registration parameter or the critical dimension parameter of the computer model when dissimilarities between the simulated images and the optical images are minimized.

    Abstract translation: 公开了一种用于执行基于模型的注册和关键维度测量的方法和系统。 该方法包括:利用成像装置获得为光掩模指定的测量部位的至少一个光学图像; 检索光掩模的设计并利用所述成像装置的计算机模型来生成所述测量部位的至少一个模拟图像; 调整所述计算机模型的至少一个参数以最小化所述模拟图像与所述光学图像之间的不相似性,其中所述参数至少包括模式注册参数或临界尺寸参数; 并且当模拟图像和光学图像之间的不相似度最小化时报告计算机模型的模式注册参数或临界尺寸参数。

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