Single die inspection on a dark field inspection tool
    2.
    发明授权
    Single die inspection on a dark field inspection tool 有权
    在暗场检查工具上进行单模检验

    公开(公告)号:US09008410B2

    公开(公告)日:2015-04-14

    申请号:US13801135

    申请日:2013-03-13

    Inventor: Tong Huang

    CPC classification number: G06T7/0004 G06T7/001 G06T2207/30148

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with a dark field inspection system. The method also includes generating first image data for the wafer using the output and a first cell size and second image data for the wafer using the output and a second cell size. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括通过用暗场检查系统扫描晶片来产生晶片的输出。 该方法还包括使用输出产生用于晶片的第一图像数据,以及使用输出和第二单元尺寸为晶片生成第一单元大小和第二图像数据。 此外,该方法包括将第一图像数据和对应于晶片上基本相同位置的第二图像数据组合,从而产生用于晶片的附加图像数据。 该方法还包括使用附加图像数据检测晶片上的缺陷。

    System, method and computer program product for identifying fabricated component defects using a local adaptive threshold

    公开(公告)号:US10043265B2

    公开(公告)日:2018-08-07

    申请号:US15221542

    申请日:2016-07-27

    Abstract: A system, method, and computer program product are provided for identifying fabricated component defects using a local adaptive threshold. In use, images are received for target and reference components of a fabricated device. Additionally, a difference image is generated from the target and reference component images, and defect candidates for the target component are identified from the difference image. Further, for each of the identified defect candidates at a location in the difference image: a threshold is determined based on a local area surrounding the location of the defect candidate, and a signal at the location of the defect candidate is compared to the threshold to determine whether the defect candidate is a defect.

    Single Die Inspection on a Dark Field Inspection Tool
    4.
    发明申请
    Single Die Inspection on a Dark Field Inspection Tool 有权
    在黑暗现场检查工具上进行单模检验

    公开(公告)号:US20140270475A1

    公开(公告)日:2014-09-18

    申请号:US13801135

    申请日:2013-03-13

    Inventor: Tong Huang

    CPC classification number: G06T7/0004 G06T7/001 G06T2207/30148

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with a dark field inspection system. The method also includes generating first image data for the wafer using the output and a first cell size and second image data for the wafer using the output and a second cell size. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括通过用暗场检查系统扫描晶片来产生晶片的输出。 该方法还包括使用输出产生用于晶片的第一图像数据,以及使用输出和第二单元尺寸为晶片生成第一单元大小和第二图像数据。 此外,该方法包括将第一图像数据和对应于晶片上基本相同位置的第二图像数据组合,从而产生用于晶片的附加图像数据。 该方法还包括使用附加图像数据检测晶片上的缺陷。

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