公开(公告)号：US20040207414A1

公开(公告)日：2004-10-21

申请号：US10638027

申请日：2003-08-08

Applicant: KLA-Tencor Technologies Corporation

Inventor： Gaurav Verma ,  Kurt H. Weiner

IPC: G01R031/305 ,  G01R031/08 ,  H01L021/66

CPC classification number: H01L22/34 ,  G01R31/307

Abstract: Disclosed are techniques for efficiently inspecting defects on voltage contrast test structures. Improved test structures for facilitating such techniques are also provided. In one embodiment, the methodologies and test structures allow inspection to occur entirely within a charged particle (e.g., e-beam) system, such as a step and repeat e-beam system. In a specific embodiment, a method of localizing and imaging defects in a semiconductor test structure suitable for voltage contrast inspection is disclosed. A charged particle beam based tool is used to determine whether there are any defects (e.g., open or short defects) present within a voltage contrast test structure. The same charged particle beam based tool is then used to locate defects determined to be present within the voltage contrast test structure. For each localized defect, the same charged particle beam based tool may then be used to generate a high resolution image of the localized defect whereby the high resolution image can later be used to classify the each defect. In one embodiment, the determination as to whether there are any defects present within the voltage contrast test structure is accomplished by inspecting a single area of the voltage contrast test structure that fits within the charged particle beam based tool field of view. In an alternative embodiment, the defect's presence and location are determined without rotating the test structure relative to the charged particle beam.

Abstract translation: 公开了用于有效地检查电压对比度测试结构上的缺陷的技术。 还提供了用于促进这种技术的改进的测试结构。 在一个实施例中，方法和测试结构允许检查完全发生在带电粒子（例如，电子束）系统中，例如步进和重复电子束系统。 在具体实施例中，公开了一种适用于电压对比度检查的半导体测试结构中的定位和成像缺陷的方法。 使用基于带电粒子束的工具来确定在电压对比度测试结构内是否存在存在任何缺陷（例如，开放或短缺陷）。 然后使用相同的带电粒子束工具来定位确定存在于电压对比度测试结构内的缺陷。 对于每个局部缺陷，可以使用相同的基于带电粒子束的工具来产生局部缺陷的高分辨率图像，由此可以使用高分辨率图像来分类每个缺陷。 在一个实施例中，关于电压对比度测试结构中是否存在任何缺陷的确定是通过检查适合于基于带电粒子束的工具视野中的电压对比度测试结构的单个区域来实现的。 在替代实施例中，在不使测试结构相对于带电粒子束旋转的情况下确定缺陷的存在和位置。

公开(公告)号：US20030071262A1

公开(公告)日：2003-04-17

申请号：US10265051

申请日：2002-10-02

Applicant: KLA-Tencor Technologies Corporation

Inventor： Kurt H. Weiner ,  Gaurav Verma

IPC: H01L023/58

CPC classification number: G01N21/9501 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2644 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  H01L22/34

Abstract: An improved voltage contrast test structure is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials present during the voltage contrast inspection, this indicates that a defect is present within the test structure. To produce different voltage potentials, a first set of substructures are coupled to a relatively large conductive structure, such as a large conductive pad, so that the first set of substructures charges more slowly than a second set of substructures that are not coupled to the relatively large conductive structure. Mechanisms for fabricating such a test structure are also disclosed. Additionally, searching mechanisms for quickly locating defects within such a test structure, as well as other types of voltage contrast structures, during a voltage contrast inspection are also provided.

Abstract translation: 公开了一种改进的电压对比度测试结构。 通常，测试结构可以在单个光刻步骤中制造，或者用单个掩模版或掩模制造。 测试结构包括在电压对比度检查期间被设计为具有特定电压电位图案的子结构。 例如，当跨越测试结构扫描电子束时，作为测试结构的预期电压电位的结果产生预期的强度图案并成像。 然而，当在电压对比度检查期间存在意外的电压电位模式时，这表明在测试结构内存在缺陷。 为了产生不同的电压电位，第一组子结构耦合到相当大的导电结构，例如大的导电焊盘，使得第一组子结构比不耦合到相对的第二组子结构的第二组子结构充电得更慢 大导电结构。 还公开了用于制造这种测试结构的机构。 此外，还提供了用于在电压对比度检查期间快速定位这种测试结构内的缺陷以及其他类型的电压对比结构的搜索机制。

公开(公告)号：US20030071261A1

公开(公告)日：2003-04-17

申请号：US10264625

申请日：2002-10-02

Applicant: KLA-Tencor Technologies Corporation

Inventor： Kurt H. Weiner ,  Gaurav Verma

IPC: H01L023/58

CPC classification number: H01L22/34 ,  G01N21/9501 ,  G01R31/2644 ,  G01R31/307

Abstract: An improved voltage contrast test structure is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials present during the voltage contrast inspection, this indicates that a defect is present within the test structure. To produce different voltage potentials, a first set of substructures are coupled to a relatively large conductive structure, such as a large conductive pad, so that the first set of substructures charges more slowly than a second set of substructures that are not coupled to the relatively large conductive structure. Mechanisms for fabricating such a test structure are also disclosed. Additionally, searching mechanisms for quickly locating defects within such a test structure, as well as other types of voltage contrast structures, during a voltage contrast inspection are also provided.