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1.
公开(公告)号:US09915782B2
公开(公告)日:2018-03-13
申请号:US15355293
申请日:2016-11-18
Inventor: Donghwan Ahn , Yoonyoung Bae
CPC classification number: G02B6/14 , G02B6/1228 , G02B2006/12061 , G02B2006/12152 , G02F1/025 , G02F2001/0151
Abstract: An optical interconnection device including: a first element layer formed on a substrate; a second element layer disposed on the first element layer and receiving an optical signal; and a mode converter interposed between the first element layer and the second element layer, and eliminating a difference between an effective refractive index of the first element layer and an effective refractive index of the second element layer and match a mode profile, wherein the first element layer, the mode converter, and the second element layer are sequentially disposed on respective planes spaced apart from each other on the substrate, and one end of the mode converter overlaps a part of the second element layer, and the other end of the mode converter overlaps a part of the first element layer.
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公开(公告)号:US10976490B2
公开(公告)日:2021-04-13
申请号:US16353561
申请日:2019-03-14
Inventor: Donghwan Ahn
Abstract: There is provided an optoelectronic device including: first and second optical waveguides arranged on a bulk silicon substrate to be spaced apart from each other in a first direction parallel to an upper surface of the bulk silicon substrate; and an active region interposed between the first and second optical waveguides on the bulk silicon substrate such that one side of the active region contacts the first optical waveguide and the other side contacts the second optical waveguide portion, wherein the first and second optical waveguides and the active region include germanium-silicon (GeSi) alloy.
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