公开(公告)号：US20140020736A1

公开(公告)日：2014-01-23

申请号：US13670784

申请日：2012-11-07

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Doh-Kwon LEE ,  Hong Gon KIM ,  Min Jae KO ,  Jin Young KIM ,  Da Woon JEONG ,  Bong Soo KIM

IPC: H01L31/18 ,  H01L31/04

CPC classification number: H01L31/18 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/04 ,  Y02E10/541

Abstract: Disclosed is a method for producing a CIS-based thin film based on self-accelerated photoelectrochemical deposition. The method includes 1) mixing precursors of elements constituting a CIS-based compound with a solvent to prepare an electrolyte solution, 2) connecting an electrochemical cell including a working electrode, the electrolyte solution and a counter electrode to a voltage or current applying device to construct an electro-deposition circuit, 3) irradiating light onto the working electrode while at the same time applying a cathodic voltage or current to the working electrode to induce self-accelerated photoelectrochemical deposition, thereby electro-depositing a CIS-based thin film, and 4) annealing the electro-deposited CIS-based thin film under a gas atmosphere including sulfur or selenium.

Abstract translation: 公开了一种基于自加速光电化学沉积制造基于CIS的薄膜的方法。 该方法包括：1）将构成CIS系化合物的元素的前体与溶剂混合以制备电​​解质溶液; 2）将包括工作电极，电解质溶液和对电极的电化学电池连接到电压或电流施加装置， 构建电沉积电路，3）向工作电极照射光，同时向工作电极施加阴极电压或电流，引起自加速光电化学沉积，从而电沉积CIS基薄膜，以及 4）在包含硫或硒的气体气氛下退火电沉积的CIS基薄膜。