公开(公告)号：US11339499B2

公开(公告)日：2022-05-24

申请号：US16587066

申请日：2019-09-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Soo Min Kim ,  Joo Song Lee ,  Hayoung Ko ,  Hye Young Koo

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L29/20 ,  C30B29/46 ,  C30B29/68

Abstract: Disclosed herein is a method for 2D epitaxial growth comprising: forming a single crystalline h-BN template; forming a plurality of nuclei by depositing a heterogeneous precursor on the h-BN template; and forming a heterogeneous structure layer by growing the plurality of deposited nuclei with a van der Waals epitaxial growth, wherein the heterogeneous structure layer is a single crystal.