Patent search ap:("KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY") AND inv:"Minho Choi" Page 1

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发明授权
Four-or-more-component-based chalcogenide phase-change material and memory device comprising the same 有权

公开(公告)号：US10700278B2

公开(公告)日：2020-06-30

申请号：US16201295

申请日：2018-11-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min Jhon , Yong Tae Kim , Chun Keun Kim , Young-Hwan Kim , Minho Choi , Sehyun Kwon

IPC: H01L45/00 , H01L27/24

Abstract: The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.

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