公开(公告)号：US11511253B2

公开(公告)日：2022-11-29

申请号：US16810229

申请日：2020-03-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sun Choi ,  Youngkyun Jung ,  Ung Su Choi

IPC: B01J13/14

Abstract: Provided is a method of fabricating capsules. The method includes: forming droplets of a dispersed phase solution including a phase transition material, a carbon nanomaterial, and a first monomer by allowing the dispersed phase solution to pass through nozzle units provided at a porous membrane in a reaction tank including the porous membrane; migrating the droplets into a mobile phase material including a second monomer; and forming polymer shells at interfaces between the droplets and the mobile phase material by polymerization between the first monomer and the second monomer.

公开(公告)号：US11453055B2

公开(公告)日：2022-09-27

申请号：US16921254

申请日：2020-07-06

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji Won Lee ,  Soo Yeol Phyo ,  Sun Choi ,  Sung Choi

IPC: B22F3/24 ,  C09D183/04 ,  B33Y40/20 ,  C22C14/00 ,  B33Y10/00 ,  B22F10/00 ,  C23C18/04 ,  B22F5/10 ,  B22F10/28 ,  B22F10/62 ,  C23C18/12 ,  B05D7/22 ,  B05D3/02 ,  B05D5/08

Abstract: Embodiments of the present disclosure provide a method of manufacturing a metal column using 3D printing technology. The method of manufacturing a metal column includes steps of: creasing a 3D-CAD design for printing the metal column; printing the metal column; pretreating the inner surface of a channel inside the metal column at low temperature; and coating the inner surface of the channel with a stationary phase so that the metal column is capable of separating a gas mixture into components.

公开(公告)号：US10421056B2

公开(公告)日：2019-09-24

申请号：US15407977

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sun Choi ,  Chan Hyuk Park ,  Young Haeng Lee

IPC: B41J2/16 ,  B01J19/00

Abstract: Provided is a fabrication method of print head of MCM device formed micro patterned air gap capable of picoliter-scale droplet printing, and more particularly, is characterized in that comprising preparing silicon wafer 10 washed by piranha solution at step A, stacking silicon nitride films 20 and 20′ up front surface and back surface of prepared silicon wafer at step B, drying after applying photoresists 30 and 30′ to top surface and bottom surface of the silicon nitride film 20 and 20′ at step C, removing partially the photoresists through pre-determined pattern by irradiation of ultraviolet after arranging photomask 40 formed through pre-determined pattern in any one side of the photoresists 30 and 30′ at step D, forming sample droplet storage space opening by removing silicon nitride film 21 contacted to photoresists removed by pre-determined pattern at step E, removing the photoresists 30 and 30′ stacked up the silicon nitride film 20 and 20′ at step F, forming sample droplet storage space 50 by etching the silicon wafer at step G, and forming sample droplet opening 60 by irradiating ultrasonic waves at step H.