公开(公告)号：US20180069153A1

公开(公告)日：2018-03-08

申请号：US15563468

申请日：2015-06-30

申请人： KOREA PHOTONICS TECHNOLOGY INSTITUTE

发明人： Seung-Jae LEE ,  Sung-Chul CHOI ,  Jong-Hyeob BAEK ,  Seong-Ran JEON ,  Sang-Mook KIM ,  Tae Hoon CHUNG

IPC分类号： H01L33/24 ,  H01L33/42 ,  H01L33/32 ,  H01L33/00

CPC分类号： C22C38/04 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device and a method for manufacturing same for improving the electrostatic discharge (ESD) characteristics of the nitride semiconductor light-emitting device. The light-emitting device includes an active layer formed flat using a low conductivity material, on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof, and a second conductive semiconductor layer, or has a v-pit structure on a junction surface between a second conductive semiconductor layer and an active layer formed flat using a low conductivity material on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof. Thus, a v-pit area has a thickness equal to or greater than a critical thickness and thus has very low conductivity, thereby preventing the flow of a current.