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1.发明申请公开(公告)号：US20180282866A1
公开(公告)日：2018-10-04
申请号：US15763378
申请日：2014-05-02
Inventor： Bo-Keun PARK , Taek-Mo CHUNG , Chang-Gyoun KIM , Dong-Ju JEON , Eun-Ae JUNG
IPC: C23C16/455 , C23C16/18 , C07F15/00
Abstract: The present invention relates to a ruthenium precursor represented by Chemical Formula 1, and the ruthenium precursor has the advantages of having improved thermal stability and volatility and not having to use oxygen when depositing a thin film, and thus is capable of forming a high-quality ruthenium thin film.
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