公开(公告)号：US20180282866A1

公开(公告)日：2018-10-04

申请号：US15763378

申请日：2014-05-02

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Bo-Keun PARK ,  Taek-Mo CHUNG ,  Chang-Gyoun KIM ,  Dong-Ju JEON ,  Eun-Ae JUNG

IPC: C23C16/455 ,  C23C16/18 ,  C07F15/00

Abstract: The present invention relates to a ruthenium precursor represented by Chemical Formula 1, and the ruthenium precursor has the advantages of having improved thermal stability and volatility and not having to use oxygen when depositing a thin film, and thus is capable of forming a high-quality ruthenium thin film.

公开(公告)号：US20180334471A1

公开(公告)日：2018-11-22

申请号：US15775347

申请日：2016-10-11

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Bo Keun PARK ,  Taek-Mo CHUNG ,  Dong Ju JEON ,  Jeong Hwan HAN ,  Ji Hyeun NAM ,  Chang Gyoun KIM ,  Eun Ae JUNG

IPC: C07F7/22 ,  C07F5/00 ,  C23C16/455 ,  C23C16/40

CPC classification number: C07F7/2224 ,  C07F5/00 ,  C07F7/22 ,  C23C16/06 ,  C23C16/407 ,  C23C16/455 ,  C23C16/45525 ,  H01L21/02 ,  H01L21/205

Abstract: The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.