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Patent Agency Ranking
公开(公告)号：US20250089432A1
公开(公告)日：2025-03-13
申请号：US18806297
申请日：2024-08-15
Inventor： Jae Won SHIM , Seon Joong KIM
Abstract: Disclosed are a perovskite quantum dot-based indoor photovoltaic cell and a manufacturing method thereof. A perovskite quantum dot-based indoor photovoltaic cell includes a transparent lower electrode layer through which indoor light passes; a photoactive layer that generates excitons by the indoor light and separates the excitons into positive and negative charges; and an upper electrode layer that absorbs the negative charge, wherein the photoactive layer is formed of a perovskite quantum dot.
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公开(公告)号：US20230422532A1
公开(公告)日：2023-12-28
申请号：US18333027
申请日：2023-06-12
Inventor： Jae Won SHIM , Tae Hyuk KIM
Abstract: An artificial indoor photovoltaic cell and a manufacturing method thereof are disclosed. The artificial indoor photovoltaic cell includes: a transparent electrode; an electron transport layer formed on the transparent electrode layer; a photoactive layer formed on the electron transport layer and including a donor layer and an acceptor layer that generate an exciton by indoor light and separate the exciton into positive and negative charges; and a charge transport layer formed on the photoactive layer and made of a material homogenous with the donor layer.
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公开(公告)号：US20250081709A1
公开(公告)日：2025-03-06
申请号：US18758298
申请日：2024-06-28
Inventor： Jae Won SHIM , Tae Hyuk KIM
Abstract: The present invention discloses a wavelength self-filtering ultra-low noise near infrared quantum dot photodiode manufacturing method and a near infrared quantum dot photodiode manufactured thereby. According to the present invention, a near infrared (NIR) quantum dot photodiode includes: a transparent electrode through which visible light and near-infrared light pass; a p-type layer that is formed on the transparent electrode to shield the visible light; a quantum dot light absorption layer that is formed on the p-type layer to a preset thickness or more to generate excitons through the near-infrared light; an n-type layer that moves negative charges generated by the excitons; and an upper electrode that is formed on the n-type layer.
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4.发明公开公开(公告)号：US20240224548A1
公开(公告)日：2024-07-04
申请号：US18400789
申请日：2023-12-29
Inventor： Jae Won SHIM , Tae Hyuk KIM , Muhammad Ahsan SAEED , Asif SHAHZAD
CPC classification number: H10K30/30 , H10K30/50 , H10K85/113 , H10K85/151 , H10K85/215 , H10K85/626 , H10K85/657
Abstract: Disclosed are an efficient indoor photovoltaic cell using two-dimensional transition metal carbides, MXene nanosheets and a manufacturing method thereof. According to the present invention, provided is an indoor photovoltaic cell including: a transparent lower electrode through which indoor light passes, an organic semiconductor layer in which a donor and a receptor generating an exciton by the indoor light and separating the exciton into a positive charge and a negative charge, and MXene having a predetermined concentration are mixed, and an upper electrode absorbing the negative charge.
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公开(公告)号：US20240147742A1
公开(公告)日：2024-05-02
申请号：US18375684
申请日：2023-10-02
Inventor： Jae Won SHIM , Tae Hyuk KIM
IPC: H10K30/20
CPC classification number: H10K30/20 , H10K85/6572
Abstract: Disclosed are a method for manufacturing a high-performance indoor photovoltaic cell using self-assembled monolayers and an indoor photovoltaic cell manufactured thereby. According to the present invention, provided is an indoor photovoltaic cell including: a transparent lower electrode passing through indoor light; a self-assembled single-layer based ultra thin 2PACz layer formed on the lower electrode with a predetermined thickness; an organic semiconductor layer formed on the 2PACz layer by mixing materials for forming a donor layer and an acceptor layer, and 2PACz, generating an exciton by the indoor light, and separating the exciton into a positive charge and a negative charge; and an upper electrode absorbing the negative charge.
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