公开(公告)号：US20140061791A1

公开(公告)日：2014-03-06

申请号：US13596481

申请日：2012-08-28

申请人： KUN-HUANG YU ,  Chin-Fu Chen

发明人： KUN-HUANG YU ,  Chin-Fu Chen

IPC分类号： H01L29/78

CPC分类号： H01L29/0653 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7816

摘要： A MOS transistor is described, including: a source region and a drain region in a semiconductor substrate, an isolation between the source region and the drain region, a first gate conductor between the source region and the isolation, at least one conductive plug electrically connected to the first gate conductor and penetrating into the isolation, and at least one second gate conductor on the isolation, which is electrically connected to the first gate conductor and the at least one conductive plug. One of the at least one conductive plug is between the first gate conductor and the at least one second gate conductor.

摘要翻译： 描述了一种MOS晶体管，包括：半导体衬底中的源极区域和漏极区域，源极区域和漏极区域之间的隔离，源区域与隔离物之间的第一栅极导体，至少一个导电插塞电连接 到所述第一栅极导体并且穿透所述隔离物，以及所述隔离件上的至少一个第二栅极导体，其电连接到所述第一栅极导体和所述至少一个导电插塞。 至少一个导电插头中的一个位于第一栅极导体和至少一个第二栅极导体之间​​。