Abstract:
THERE IS PROVIDED A PROCESS FOR PRODUCING FROM CERTAIN SEMICONDUCTIVE ALLOYS, E.G. AN ALLOY OF SILICON AND GERMANIUM, WITH OR WITHOUT DOPANTS, A COMPOSITE BODY HAVING AN OZIDIZED COATING ON A BULK BODY OF THE ALLOY, AND IN WHICH THERE IS AN INCREASED CONCENTRATION OF ONE OF THE ELEMENTS, E.G. GERMANIUM, AT THE INTERFACE AND IN THE SUBSURFACE AND WHEREBY THE OXIDE COMPOSITION IS CONTROLLED AND WHEREIN THE BULK BODY OF THE ALLOY IS SUBJECTED TO A PREDETERMINED NUMBER OF OPERATIONAL CYCLES FROM 1 TO 10 OR MORE, EACH CYCLE INCLUDING OXIDATION, E.G. THERMAL OXIDAION, IN A CHEMICALLY OXIDIZING ENVIRONMENT, E.G. AN OXYGEN-CONTAINING OR YIELDING GASEOUS MEDIUM. FOLLOWING OXIDATION, ETCHING OF THE OXIDE COATING MAY OPTIONALLY BE PERFORMED, OR AN OXIDATION-ETCHING CYCLE REPEATED. NOVEL SEMICONDUCTOR MATERIALS ARE OBTAINED BY THIS PROCESS WHICH AFFORD ADVANTAGES IN FABRICATION AND PERFORMANCE OF DEVICES.