公开(公告)号：US20240380187A1

公开(公告)日：2024-11-14

申请号：US18228633

申请日：2023-07-31

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Thiago P. Melo ,  Ryan C. White ,  Philip Chan ,  Phillip Skahan

IPC: H01S5/50 ,  H01S5/026 ,  H01S5/042 ,  H01S5/10 ,  H01S5/125 ,  H01S5/40

Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and master oscillator power amplifier devices, among others configured with improved mode quality.