公开(公告)号：US20250015558A1

公开(公告)日：2025-01-09

申请号：US18892174

申请日：2024-09-20

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Philip Chan ,  Phillip Skahan ,  James W. Raring ,  Nicholas J. Pfister

IPC: H01S5/042 ,  H01S5/02355 ,  H01S5/026 ,  H01S5/06 ,  H01S5/12 ,  H01S5/343

Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high-power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and power amplifier devices configured with improved mode quality, each of which can be modulated using a modulator device.

公开(公告)号：US20220344476A1

公开(公告)日：2022-10-27

申请号：US17849848

申请日：2022-06-27

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Philip Chan ,  Phillip Skahan ,  Nick Pfister ,  Christian Zollner ,  James W. Raring

IPC: H01L29/205 ,  H01L33/00 ,  H01L33/32 ,  H01L27/12 ,  H01L27/06 ,  H01L23/00 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683 ,  H01L27/088 ,  H01L27/15 ,  H01L29/66 ,  H01L33/06 ,  H01S5/02 ,  H01S5/227 ,  H01S5/343

Abstract: A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

公开(公告)号：US20240380187A1

公开(公告)日：2024-11-14

申请号：US18228633

申请日：2023-07-31

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Thiago P. Melo ,  Ryan C. White ,  Philip Chan ,  Phillip Skahan

IPC: H01S5/50 ,  H01S5/026 ,  H01S5/042 ,  H01S5/10 ,  H01S5/125 ,  H01S5/40

Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and master oscillator power amplifier devices, among others configured with improved mode quality.