公开(公告)号：US11950448B2

公开(公告)日：2024-04-02

申请号：US17681088

申请日：2022-02-25

Applicant: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Yun Seon Do ,  Jun Yong Kim

IPC: H10K50/852 ,  H10K50/11 ,  H10K50/818 ,  H10K50/828

CPC classification number: H10K50/852 ,  H10K50/11 ,  H10K50/818 ,  H10K50/828

Abstract: The present disclosure relates to an optoelectronic device based on a dual micro-cavity structure, and more particularly, to a technology that simultaneously realizes the high Q factors of the three primary colors in an optoelectronic device based on a dual micro-cavity structure. The optoelectronic device according to one embodiment of the present disclosure is applied to a self-emissive device, and includes a first reflector layer, an active cavity layer formed on the first reflector layer, a second reflector layer formed on the active cavity layer, an external cavity layer formed on the second reflector layer, a third reflector layer formed on the external cavity layer, and a passivation layer formed on the third reflector layer, wherein a first micro-cavity corresponding to the first and second reflector layers and a second micro-cavity corresponding to the second and third reflector layers may be generated.

公开(公告)号：US20220336777A1

公开(公告)日：2022-10-20

申请号：US17681088

申请日：2022-02-25

Applicant: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Yun Seon Do ,  Jun Yong KIM

IPC: H01L51/52 ,  H01L51/50

Abstract: The present disclosure relates to an optoelectronic device based on a dual micro-cavity structure, and more particularly, to a technology that simultaneously realizes the high Q factors of the three primary colors in an optoelectronic device based on a dual micro-cavity structure. The optoelectronic device according to one embodiment of the present disclosure is applied to a self-emissive device, and includes a first reflector layer, an active cavity layer formed on the first reflector layer, a second reflector layer formed on the active cavity layer, an external cavity layer formed on the second reflector layer, a third reflector layer formed on the external cavity layer, and a passivation layer formed on the third reflector layer, wherein a first micro-cavity corresponding to the first and second reflector layers and a second micro-cavity corresponding to the second and third reflector layers may be generated.