Synthesis of LiBC and hole-doped Li1-xBC
    1.
    发明授权
    Synthesis of LiBC and hole-doped Li1-xBC 失效
    LiBC和空穴掺杂Li1-xBC的合成

    公开(公告)号:US07144562B2

    公开(公告)日:2006-12-05

    申请号:US10718491

    申请日:2003-11-19

    IPC分类号: C01B35/00

    摘要: Methods are described for synthesizing stoichiometric LiBC and hole doped Li1-xBC (lithium borocarbide) according to heating processes, such as by both an arc-melting method and a sealed tantalum ampoule method. The arc-melting method requires forming a pellet of uniformly-mixed elemental lithium, boron, and graphite and subjecting it to an arc-melt process sufficient to trigger a self-propagating exothermic reaction. Alternatively, the titanium ampoule method requires sealing uniformly-mixed elemental lithium, boron, and graphite (Li—B—C) in a tantalum ampoule; and heating under sufficient temperature for a sufficient period of time. Hole-doped Li1-xBC (0≦x≦0.37) can then be produced, such as through vacuum de-intercalation from the LiBC. According to the present invention, the hexagonal crystal lattice remains largely intact, with only slight decreases in lattice parameters upon hole-doping. The samples are intrinsically diamagnetic and are semiconducting in the 2 K to 300 K range studied.

    摘要翻译: 描述了根据加热过程,例如通过电弧熔化法和密封的钽安瓿法合成化学计量的LiBC和掺杂锂的Li 1-x BC(硼氢化锂)的方法。 电弧熔化法需要形成均匀混合的元素锂,硼和石墨的颗粒,并使其经受足够的电弧熔融过程以引发自扩散的放热反应。 或者,钛安瓿方法需要在钽安瓿中密封均匀混合的元素锂,硼和石墨(Li-B-C); 并在足够的温度下加热足够的时间。 然后可以产生孔掺杂的Li 1-x BC(0 <= x <= 0.37),例如通过来自LiBC的真空去插入。 根据本发明,六方晶格晶体基本保持完好,空穴掺杂时晶格参数仅略微降低。 样品本质上是抗磁性的,并且在所研究的2K至300K范围内是半导体的。

    SYNTHESIS OF LIBC AND HOLE-DOPED LI1-XBC
    2.
    发明申请
    SYNTHESIS OF LIBC AND HOLE-DOPED LI1-XBC 失效
    LIBC和HOI-DOPED LI1-XBC的合成

    公开(公告)号:US20060237692A1

    公开(公告)日:2006-10-26

    申请号:US10718491

    申请日:2003-11-19

    IPC分类号: H01B1/00

    摘要: Methods are described for synthesizing stoichiometric LiBC and hole doped Li1-xBC (lithium borocarbide) according to heating processes, such as by both an arc-melting method and a sealed tantalum ampoule method. - The arc-melting method requires forming a pellet of uniformly-mixed elemental lithium, boron, and graphite and subjecting it to an arc-melt process sufficient to trigger a self-propagating exothermic reaction. Alternatively, the titanium ampoule method requires sealing uniformly-mixed elemental lithium, boron, and graphite (Li—B—C) in a tantalum ampoule; and heating under sufficient temperature for a sufficient period of time. Hole-doped Li1-xBC (0≦x≦0.37) can then be produced, such as through vacuum de-intercalation from the LiBC. According to the present invention, the hexagonal crystal lattice remains largely intact, with only slight decreases in lattice parameters upon hole-doping. The samples are intrinsically diamagnetic and are semiconducting in the 2 K to 300 K range studied.

    摘要翻译: 描述了根据加热过程,例如通过电弧熔化法和密封的钽安瓿法合成化学计量的LiBC和掺杂锂的Li 1-x BC(硼氢化锂)的方法。 - 电弧熔化法需要形成均匀混合的元素锂,硼和石墨的颗粒,并使其经受足够的电弧熔融过程以引发自扩散的放热反应。 或者,钛安瓿方法需要在钽安瓿中密封均匀混合的元素锂,硼和石墨(Li-B-C); 并在足够的温度下加热足够的时间。 然后可以产生孔掺杂的Li 1-x BC(0 <= x <= 0.37),例如通过来自LiBC的真空去插入。 根据本发明,六方晶格晶体基本保持完好,空穴掺杂时的晶格参数仅略微降低。 样品本质上是抗磁性的,并且在所研究的2K至300K范围内是半导体的。