公开(公告)号：US4916303A

公开(公告)日：1990-04-10

申请号：US351218

申请日：1989-05-15

申请人： Karl H. Schoenbach ,  Vishnukumar K. Lakdawala ,  Ralf P. Brinkmann ,  Glenn A. Gerdin

发明人： Karl H. Schoenbach ,  Vishnukumar K. Lakdawala ,  Ralf P. Brinkmann ,  Glenn A. Gerdin

IPC分类号： H01L31/0296 ,  H01L31/0304 ,  H01L31/09

CPC分类号： H01L31/02963 ,  H01L31/03042 ,  H01L31/09 ,  Y02E10/544

摘要： An electron beam controlled semiconductor switch is capable of carrying large currents without being restricted by the space charge limited current condition. The switch includes a block of semiconductor material having ohmic contacts connectable to first and second electrical conductors. Semi-insulating GaAs may be used as the semiconductor material. A shallow donor or acceptor doped layer may be formed at the surface receiving the electron beam for increased band-edge radiation. This recombination radiation ionizes, together with X-rays produced by Bremsstrahlung, the bulk of the semiconductor block to provide relatively high current density and current gain.

摘要翻译： 电子束控制半导体开关能够承受大电流而不受空间电荷限制电流条件的限制。 开关包括具有可连接到第一和第二电导体的欧姆接触的半导体材料块。 可以使用半绝缘GaAs作为半导体材料。 可以在接收电子束的表面处形成浅施主或受主掺杂层，以增加带边辐射。 该复合辐射与由Bremsstrahlung生产的X射线一起电离，半导体块的主体以提供相对高的电流密度和电流增益。