1200°C Film Resistor
    1.
    发明申请
    1200°C Film Resistor 有权
    1200°C膜电阻

    公开(公告)号:US20090115567A1

    公开(公告)日:2009-05-07

    申请号:US12237742

    申请日:2008-09-25

    IPC分类号: H01C7/02 C03B29/00

    摘要: For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.

    摘要翻译: 为了制造其中在金属氧化物基板上特别是蓝宝石或陶瓷板上施加铂电阻膜的高温传感器,并且在电阻膜上铺设陶瓷中间层,自支撑盖, 特别是陶瓷或玻璃陶瓷覆盖层结合在陶瓷中间层上,或玻璃陶瓷安装在其整个表面上的中间层上。 有利地,玻璃陶瓷是导电的或离子导体高于750℃,并且被放置在直到电阻膜的阴极直到超过中间层。 特别地,覆盖物与掺入金属的玻璃陶瓷结合,该玻璃陶瓷铺设在电阻膜的阴极上,直到超过中间层。 优选地,电绝缘中间层涂覆有掺杂有金属的玻璃陶瓷或玻璃陶瓷,该涂层在850℃或更高温度下具有至多1兆欧每平方厘米的电阻。