公开(公告)号：US20210405537A1

公开(公告)日：2021-12-30

申请号：US17471740

申请日：2021-09-10

Applicant: Karlsruhe Institute of Technology

Inventor： Christian Koos ,  Tobias Hoose ,  Philipp Dietrich ,  Matthias Blaicher ,  Maria Laura Gödecke ,  Nicole Lindenmann

IPC: G03F7/20 ,  G03F7/00

Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

公开(公告)号：US20190163067A1

公开(公告)日：2019-05-30

申请号：US16263461

申请日：2019-01-31

Applicant: Karlsruhe Institute of Technology

Inventor： Christian Koos ,  Tobias Hoose ,  Philipp Dietrich ,  Matthias Blaicher ,  Maria Laura Gödecke ,  Nicole Lindenmann

IPC: G03F7/20 ,  G03F7/00 ,  G02B6/138 ,  G02B6/12 ,  H01L21/027

Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

公开(公告)号：US11630394B2

公开(公告)日：2023-04-18

申请号：US17471740

申请日：2021-09-10

Applicant: Karlsruhe Institute of Technology

Inventor： Christian Koos ,  Tobias Hoose ,  Philipp Dietrich ,  Matthias Blaicher ,  Maria Laura Gödecke ,  Nicole Lindenmann

IPC: G03F7/20 ,  G03F7/00

Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.

公开(公告)号：US11143966B2

公开(公告)日：2021-10-12

申请号：US16263461

申请日：2019-01-31

Applicant: Karlsruhe Institute of Technology

Inventor： Christian Koos ,  Tobias Hoose ,  Philipp Dietrich ,  Matthias Blaicher ,  Maria Laura Gödecke ,  Nicole Lindenmann

IPC: G03F7/20 ,  G03F7/00

Abstract: Disclosed is a method for lithographically producing a target structure on a non-planar initial structure by exposing a photoresist by means of a lithography beam. In the inventive method, the topography of a surface of the non-planar initial structure is detected. A test parameter for the lithography beam is used and an interaction of the lithography beam with the initial structure and the resultant change in the lithography beam and/or the target structure to be produced are determined. A correction parameter for the lithography beam is determined such that the change in the lithography beam and/or the target structure to be produced that is caused by the interaction of the lithography beam with the initial structure is reduced. The desired target structure on the initial structure is produced by exposing the photoresist by means of the lithography beam using the correction parameter.