公开(公告)号：US6055135A

公开(公告)日：2000-04-25

申请号：US823094

申请日：1997-03-24

申请人： Kazuaki Fukamichi ,  Yutaka Shimada ,  Osamu Kitakami ,  Kim Jek Jun ,  Hiroko Uyama ,  Akihiro Makino ,  Naoya Hasegawa

发明人： Kazuaki Fukamichi ,  Yutaka Shimada ,  Osamu Kitakami ,  Kim Jek Jun ,  Hiroko Uyama ,  Akihiro Makino ,  Naoya Hasegawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3218 ,  Y10T428/1121

摘要： The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.

摘要翻译： 本发明的目的在于提供一种由FeMn或NiMn以外的完全新颖的材料构成且具有优异的耐腐蚀性和高电阻率的优异的交换耦合薄膜，以及包括交换耦合薄膜的磁阻元件和磁头。 交换耦合薄膜包括主体由体心立方结构的晶相和含有元素M的元素M构成的反铁磁性膜，元素M含有元素周期表中的3B族元素的至少一种元素，或Al，Ga 或In，以及包含Fe，Ne和Co中的至少一种的铁磁膜，两个膜彼此层压，其中在反铁磁膜和铁磁膜之间的界面中产生磁交换耦合。