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268 条记录 (耗时 0.027 秒)

    Exchange coupling thin film and magnetoresistive element comprising the same
    1.
    发明授权
    Exchange coupling thin film and magnetoresistive element comprising the same 失效
    交换耦合薄膜和包含其的磁阻元件

    公开(公告)号：US6055135A

    公开(公告)日：2000-04-25

    申请号：US823094

    申请日：1997-03-24

    申请人： Kazuaki Fukamichi ,  Yutaka Shimada ,  Osamu Kitakami ,  Kim Jek Jun ,  Hiroko Uyama ,  Akihiro Makino ,  Naoya Hasegawa

    发明人： Kazuaki Fukamichi ,  Yutaka Shimada ,  Osamu Kitakami ,  Kim Jek Jun ,  Hiroko Uyama ,  Akihiro Makino ,  Naoya Hasegawa

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3218 ,  Y10T428/1121

    摘要： The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.

    摘要翻译： 本发明的目的在于提供一种由FeMn或NiMn以外的完全新颖的材料构成且具有优异的耐腐蚀性和高电阻率的优异的交换耦合薄膜，以及包括交换耦合薄膜的磁阻元件和磁头。 交换耦合薄膜包括主体由体心立方结构的晶相和含有元素M的元素M构成的反铁磁性膜，元素M含有元素周期表中的3B族元素的至少一种元素，或Al，Ga 或In，以及包含Fe，Ne和Co中的至少一种的铁磁膜，两个膜彼此层压，其中在反铁磁膜和铁磁膜之间的界面中产生磁交换耦合。

    Magnetic sensor exhibiting large change in resistance at low external magnetic field
    4.
    发明授权
    Magnetic sensor exhibiting large change in resistance at low external magnetic field 失效
    磁传感器在低外部磁场下表现出较大的电阻变化

    公开(公告)号：US06191577B1

    公开(公告)日：2001-02-20

    申请号：US09036606

    申请日：1998-03-06

    申请人： Yoshito Sasaki ,  Naoya Hasegawa ,  Akihiro Makino ,  Ichiro Tokunaga ,  Seiji Kikuchi

    发明人： Yoshito Sasaki ,  Naoya Hasegawa ,  Akihiro Makino ,  Ichiro Tokunaga ,  Seiji Kikuchi

    IPC分类号： G01R3309

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996 ,  H01F10/3268

    摘要： A magnetoresistive sensor includes a plurality of multilayered magnetoresistive films arranged in parallel. Each multilayered magnetoresistive film includes at least one pinned ferromagnetic layer and at least one free magnetic layer. Reversion of magnetization of the pinned ferromagnetic layer is pinned, whereas the vector of magnetization of the free ferromagnetic layer freely reverses in response to an external magnetic field. The vectors of magnetization of the pinned ferromagnetic layers in two adjacent multilayered magnetoresistive films are substantially antiparallel to each other.

    摘要翻译： 磁阻传感器包括并列布置的多个多层磁阻膜。 每个多层磁阻膜包括至少一个钉扎铁磁层和至少一个自由磁性层。 固定的铁磁层的磁化反转被固定，而自由铁磁层的磁化矢量响应于外部磁场自由地反转。 两个相邻的多层磁阻膜中的钉扎铁磁层的磁化向量基本上是反平行的。

    Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias
    5.
    发明授权
    Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias 失效
    旋转阀磁阻传感器包括用于增加矫顽力的第一反铁磁层和用于施加纵向偏压的第二反铁磁层

    公开(公告)号：US06496338B2

    公开(公告)日：2002-12-17

    申请号：US09891327

    申请日：2001-06-25

    申请人： Naoya Hasegawa ,  Masamichi Saito ,  Akihiro Makino

    发明人： Naoya Hasegawa ,  Masamichi Saito ,  Akihiro Makino

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/10 ,  H01L43/12

    摘要： The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for increasing the coercive force of the first ferromagnetic layer to pin the magnetization direction of the first ferromagnetic layer. A pair of second antiferromagnetic layers are respectively positioned adjacent to the longitudinal ends of the second ferromagnetic layer. Further, a pair of third ferromagnetic layers are respectively layered adjacent to said pair of second antiferromagnetic layers for inducing magnetic anisotropy to pin the magnetization direction of each third ferromagnetic layer in a direction perpendicular to the pinned magnetization direction of the first ferromagnetic layer, thereby imposing a longitudinal bias on the second ferromagnetic layer to stabilize magnetic domains therein in order to suppress Barkhausen noise. The magnetization direction of the second ferromagnetic layer remains free to rotate in accordance with the direction of an external magnetic field, thereby changing the electrical resistance of the sensor.

    摘要翻译： 本发明提供一种自旋阀磁阻传感器，其包括至少两个包含第一和第二铁磁层的铁磁层。 第一反铁磁性层与第一铁磁层相邻地层叠，以增加第一铁磁性层的矫顽力来固定第一铁磁性层的磁化方向。 一对第二反铁磁层分别邻近第二铁磁层的纵向端部定位。 此外，一对第三铁磁层分别与所述一对第二反铁磁层相邻地层叠，用于引起磁各向异性以在垂直于第一铁磁层的钉扎磁化方向的方向上引导每个第三铁磁层的磁化方向，由此施加 为了抑制巴克豪森噪声，第二铁磁层上的纵向偏压使其中的磁畴稳定。 第二铁磁层的磁化方向根据外部磁场的方向保持自由旋转，从而改变传感器的电阻。

    Magnetoresistance device and production method thereof
    6.
    发明授权
    Magnetoresistance device and production method thereof 失效
    磁阻装置及其制造方法

    公开(公告)号：US06326092B1

    公开(公告)日：2001-12-04

    申请号：US09593120

    申请日：2000-06-13

    申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Akihiro Makino

    发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Akihiro Makino

    IPC分类号： G11B566

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/12 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/12986

    摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.

    摘要翻译： 磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度 在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向 的矫顽力增强层。 还公开了一种制造这种装置的方法。

    Magnetoresistance device
    7.
    发明授权
    Magnetoresistance device 失效
    磁阻装置

    公开(公告)号：US06210810B1

    公开(公告)日：2001-04-03

    申请号：US08928765

    申请日：1997-09-12

    申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Akihiro Makino

    发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Akihiro Makino

    IPC分类号： B32B1518

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/12 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/12986

    摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.

    摘要翻译： 磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度 在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向 的矫顽力增强层。 还公开了一种制造这种装置的方法。

    Method of producing magnetoresistive element
    8.
    发明授权
    Method of producing magnetoresistive element 失效
    制造磁阻元件的方法

    公开(公告)号：US6074707A

    公开(公告)日：2000-06-13

    申请号：US18919

    申请日：1998-02-05

    申请人： Yukie Nakazawa ,  Masamichi Saito ,  Naoya Hasegawa ,  Akihiro Makino

    发明人： Yukie Nakazawa ,  Masamichi Saito ,  Naoya Hasegawa ,  Akihiro Makino

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01F41/32 ,  H01L43/12 ,  H01F1/00

    CPC分类号： B82Y25/00 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/12

    摘要： The present invention provides a method of producing a magnetoresistive element in which a laminate including a free ferromagnetic layer in which at least magnetization is freely rotated according to an external magnetic field, a non-magnetic layer, and a pinned ferromagnetic layer in which reversal of magnetization is pinned is formed, and is heat-treated for setting different directions of the easy axis of magnetization of the free ferromagnetic layer and the pinned ferromagnetic layer under different conditions. In the heat treatment, first annealing is performed at the predetermined temperature in a magnetic field applied in a first direction, and second annealing is performed in a magnetic field applied in a second direction substantially perpendicular to the first direction so that the easy axis of magnetization of the free ferromagnetic layer is substantially perpendicular to that of the pinned ferromagnetic layer.

    摘要翻译： 本发明提供了一种制造磁阻元件的方法，其中包括自由铁磁层的层压体，其中至少磁化根据外部磁场自由旋转，非磁性层和固定的铁磁层，其中反转 形成磁化，并对不同条件下的自由铁磁层和被固定铁磁层的易磁化轴的不同方向进行热处理。 在热处理中，在施加于第一方向的磁场中，在规定温度下进行第一退火，在与第一方向大致正交的第二方向施加的磁场中进行第二退火，使得易磁化轴 的自由铁磁层基本上垂直于被钉扎的铁磁层。