公开(公告)号：US20100132746A1

公开(公告)日：2010-06-03

申请号：US12591622

申请日：2009-11-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/08 ,  B08B13/00

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

摘要翻译： 公开了一种多晶硅洗涤装置，其将多晶硅顺序浸渍在多个酸浴中，每个酸浴充满酸以洗涤多晶硅。 将酸浴中的酸的温度设定为使得相邻酸浴的后期酸浴中的酸的温度等于或低于前一个酸浴的酸温度，并且酸在最后酸浴中的温度 比第一酸浴中的酸低。 每个酸浴设置有温度调节单元，其将酸的温度控制在恒定值。

公开(公告)号：US07976599B2

公开(公告)日：2011-07-12

申请号：US12230592

申请日：2008-09-02

申请人： Kazuhiro Sakai ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Yukiyasu Miyata

IPC分类号： B01D50/00

CPC分类号： C01B33/037 ,  Y10S55/18

摘要： A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.

摘要翻译： 一种包括放置多晶硅的工作台的清洁工作台，包括除了工作台上方的工作空间的前表面以外的三个侧面的侧板的箱体部以及覆盖工作空间的上侧的顶板。 在箱部的顶板上形成有供给孔，将工作台的上表面供给清洁空气。 提供电离器，其将从供应孔供应的清洁空气电离到工作空间，并去除工作台上的静电。 在箱体的侧板上形成有吸入孔，吸入空气从工作空间吸入空气。

公开(公告)号：US09238876B2

公开(公告)日：2016-01-19

申请号：US13141802

申请日：2009-12-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/00 ,  B08B7/04 ,  C30B29/06 ,  C01B33/037 ,  C01B33/035

CPC分类号： C30B29/06 ,  C01B33/035 ,  C01B33/037

摘要： A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided.

摘要翻译： 提供洗涤多晶硅的方法。 该方法包括酸洗的步骤，其中用酸溶液清洗多晶硅，以及在酸洗步骤之后用纯水清洗多晶硅的水清洗步骤。 在水洗步骤中，通过将多晶硅浸入保持在水洗浴中的纯水中并将水洗涤浴中的纯水替换至少一次来除去多晶硅表面上的残留酸溶液。 测量清洗槽中纯水的电导率（C）。 根据电导率（C）的读数，决定水洗步骤的完成时间。

公开(公告)号：US20110120506A1

公开(公告)日：2011-05-26

申请号：US12929585

申请日：2011-02-02

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/00

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

摘要翻译： 公开了一种多晶硅洗涤装置，其将多晶硅顺序浸渍在多个酸浴中，每个酸浴充满酸以洗涤多晶硅。 将酸浴中的酸的温度设定为使得相邻酸浴的后期酸浴中的酸的温度等于或低于前一个酸浴的酸温度，并且酸在最后酸浴中的温度 比第一酸浴中的酸低。 每个酸浴设置有温度调节单元，其将酸的温度控制在恒定值。

公开(公告)号：US07905963B2

公开(公告)日：2011-03-15

申请号：US12591622

申请日：2009-11-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/04

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

公开(公告)号：US20090081108A1

公开(公告)日：2009-03-26

申请号：US12230592

申请日：2008-09-02

申请人： Kazuhiro Sakai ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Yukiyasu Miyata

IPC分类号： C01B33/021 ,  B01D50/00 ,  B08B15/02

CPC分类号： C01B33/037 ,  Y10S55/18

摘要： A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.

摘要翻译： 一种包括放置多晶硅的工作台的清洁工作台，包括除了工作台上方的工作空间的前表面以外的三个侧面的侧板的箱体部以及覆盖工作空间的上侧的顶板。 在箱部的顶板上形成有供给孔，将工作台的上表面供给清洁空气。 提供电离器，其将从供应孔供应的清洁空气电离到工作空间，并去除工作台上的静电。 在箱体的侧板上形成有吸入孔，吸入空气从工作空间吸入空气。

公开(公告)号：US08875720B2

公开(公告)日：2014-11-04

申请号：US12929585

申请日：2011-02-02

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/04 ,  H01L21/677 ,  C01B33/037

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

摘要翻译： 公开了一种多晶硅洗涤装置，其将多晶硅顺序浸渍在多个酸浴中，每个酸浴充满酸以洗涤多晶硅。 将酸浴中的酸的温度设定为使得相邻酸浴的后期酸浴中的酸的温度等于或低于前一个酸浴的酸温度，并且酸在最后酸浴中的温度 比第一酸浴中的酸低。 每个酸浴设置有温度调节单元，其将酸的温度控制在恒定值。

公开(公告)号：US20110236292A1

公开(公告)日：2011-09-29

申请号：US13067439

申请日：2011-06-01

申请人： Kazuhiro Sakai ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Yukiyasu Miyata

IPC分类号： C01B33/03

CPC分类号： C01B33/037 ,  Y10S55/18

摘要： A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.

公开(公告)号：US08372372B2

公开(公告)日：2013-02-12

申请号：US13067439

申请日：2011-06-01

申请人： Kazuhiro Sakai ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Yukiyasu Miyata

IPC分类号： C01B33/02

CPC分类号： C01B33/037 ,  Y10S55/18

摘要： A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.

公开(公告)号：US20110253177A1

公开(公告)日：2011-10-20

申请号：US13141802

申请日：2009-12-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/00

CPC分类号： C30B29/06 ,  C01B33/035 ,  C01B33/037

摘要： A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided.

摘要翻译： 提供洗涤多晶硅的方法。 该方法包括酸洗的步骤，其中用酸溶液清洗多晶硅，以及在酸洗步骤之后用纯水清洗多晶硅的水清洗步骤。 在水洗步骤中，通过将多晶硅浸入保持在水洗浴中的纯水中并将水洗涤浴中的纯水替换至少一次来除去多晶硅表面上的残留酸溶液。 测量清洗槽中纯水的电导率（C）。 根据电导率（C）的读数，决定水洗步骤的完成时间。