公开(公告)号：US5447294A

公开(公告)日：1995-09-05

申请号：US184055

申请日：1994-01-21

申请人： Kazunari Sakata ,  Masato Kadobe ,  Isao Furuya ,  Shingo Watanabe ,  Hiroki Fukushima ,  Hiroyuki Iwai

发明人： Kazunari Sakata ,  Masato Kadobe ,  Isao Furuya ,  Shingo Watanabe ,  Hiroki Fukushima ,  Hiroyuki Iwai

IPC分类号： H01L21/00

CPC分类号： H01L21/67109

摘要： A vertical heat treatment system for heat treating a large number of semiconductor wafers housed in a boat at once includes a heat treatment unit having a boat loading/unloading port, a boat section communicating with the heat treatment unit through the boat loading/unloading port, an elevator mechanism for loading/unloading the boat between the boat section and the heat treatment unit through the boat loading/unloading port, a cassette section provided adjacent to the boat section, a wafer transfer mechanism for transferring wafers between a cassette and the boat, a gas supply mechanism for supplying a non-oxidization gas into the boat section, and a gas shower means for blowing the non-oxidization gas to the wafers in the vicinity of the boat loading/unloading port.

摘要翻译： 用于一次热处理容纳在船上的大量半导体晶片的立式热处理系统包括具有船装卸口的热处理单元，通过船装卸口与热处理单元连通的船段， 用于通过船舶装载/卸载端口在船舶部分和热处理单元之间装载/卸载船舶的电梯机构，与船舱部分相邻设置的舱室部分，用于在盒和船之间传送晶片的晶片传送机构， 用于将非氧化气体供应到船舶部分中的气体供给机构，以及用于将非氧化气体吹送到船舶装载/卸载端口附近的晶片的气体淋浴装置。

公开(公告)号：US09039411B2

公开(公告)日：2015-05-26

申请号：US13409426

申请日：2012-03-01

申请人： Masato Kadobe ,  Naomi Onodera ,  Kazuhiko Kato

发明人： Masato Kadobe ,  Naomi Onodera ,  Kazuhiko Kato

IPC分类号： F27D1/00 ,  F27D11/00 ,  F27B5/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/22 ,  H01L21/324 ,  H01L21/67 ,  C23C16/34 ,  C23C16/30 ,  F27B17/00

CPC分类号： C23C16/345 ,  C23C16/303 ,  C23C16/46 ,  F27B17/0025 ,  H01L21/67109

摘要： A disclosed thermal treatment apparatus includes a supporting member where plural substrates are supported in the form of shelves; a reaction tube that accommodates the supporting member within the reaction tube, and is provided with plural gas supplying pipes arranged in a side part of the reaction tube, thereby allowing a gas to flow into the reaction tube through the plural gas supplying pipes; and a first heating part that heats the plural substrates supported by the supporting member accommodated within the reaction tube, wherein the first heating part includes a slit that extends from a bottom end to a top end of the first heating part and allows the plural gas supplying pipes to go therethrough, and wherein an entire inner surface, except for the slit, of the heating part faces the side part of the reaction tube.

摘要翻译： 所公开的热处理装置包括支撑部件，其中多个基板以搁板的形式被支撑; 反应管，其容纳反应管内的支撑构件，并且在反应管的侧部设置有多个供气管，从而允许气体通过多个气体供给管流入反应管; 以及第一加热部，其加热由容纳在所述反应管内的所述支撑部件支撑的所述多个基板，其中，所述第一加热部包括从所述第一加热部的底端延伸到所述顶端的狭缝， 管道通过，并且其中除了加热部分的狭缝之外的整个内表面面向反应管的侧部。

公开(公告)号：US07670138B2

公开(公告)日：2010-03-02

申请号：US11813000

申请日：2007-06-22

申请人： Katsuhiko Anbai ,  Masayuki Oikawa ,  Masato Kadobe

发明人： Katsuhiko Anbai ,  Masayuki Oikawa ,  Masato Kadobe

IPC分类号： F27D5/00

CPC分类号： H01L21/67109

摘要： The present invention is a quartz-product baking method for baking a first quartz product and a second quartz product to remove a metal contained therein, the first and second quartz products being to be loaded into a heat-processing apparatus for heat-processing a semiconductor substrate so that at least a part of each quartz product is brought into contact with a heat-processing atmosphere of the heat-processing apparatus, the quartz-product baking method comprising the steps of: with the use of a jig including a first jig element and a second jig element that are disengageably stacked in a tier-like manner, placing the first quartz product on the first jig element, stacking the second jig element on the first jig element, and placing the second quartz product on the second jig member; placing on a lid member the jig in which the quartz products are placed in a tier-like manner, elevating the lid member to load the jig into a baking vertical vessel through a lower opening thereof, and hermetically sealing the lower opening of the baking vertical vessel with the lid member; heating an atmosphere in the baking vertical vessel; and supplying a baking gas containing a hydrogen chloride gas and a gas for enhancing reactivity of the hydrogen chloride gas, into the baking vertical vessel.

摘要翻译： 本发明是一种用于烘焙第一石英产品和第二石英产品以去除其中所含金属的石英产品烘烤方法，第一和第二石英产品将被加载到用于热处理半导体的热处理设备中 基板，使得每个石英产品的至少一部分与热处理装置的热处理气氛接触，所述石英产品烘焙方法包括以下步骤：使用包括第一夹具元件的夹具 以及第二夹具元件，其以层状方式可分离地堆叠，将所述第一石英产品放置在所述第一夹具元件上，将所述第二夹具元件堆叠在所述第一夹具元件上，并将所述第二石英产品放置在所述第二夹具构件上; 将其中石英产品以层状的方式放置在盖构件上，升高盖构件，通过其下开口将夹具装载到烘烤垂直容器中，并将烘烤垂直的下开口气密地密封 具有盖构件的容器; 加热烘烤垂直容器中的气氛; 并将含有氯化氢气体和用于提高氯化氢气体的反应性的气体的烘烤气体供给到烘烤立式容器中。

公开(公告)号：US20080044785A1

公开(公告)日：2008-02-21

申请号：US11813000

申请日：2007-06-22

申请人： Katsuhiko Anbai ,  Masayuki Oikawa ,  Masato Kadobe

发明人： Katsuhiko Anbai ,  Masayuki Oikawa ,  Masato Kadobe

IPC分类号： H01L21/00

CPC分类号： H01L21/67109

摘要： The present invention is a quartz-product baking method for baking a first quartz product and a second quartz product to remove a metal contained therein, the first and second quartz products being to be loaded into a heat-processing apparatus for heat-processing a semiconductor substrate so that at least a part of each quartz product is brought into contact with a heat-processing atmosphere of the heat-processing apparatus, the quartz-product baking method comprising the steps of: with the use of a jig including a first jig element and a second jig element that are disengageably stacked in a tier-like manner, placing the first quartz product on the first jig element, stacking the second jig element on the first jig element, and placing the second quartz product on the second jig member; placing on a lid member the jig in which the quartz products are placed in a tier-like manner, elevating the lid member to load the jig into a baking vertical vessel through a lower opening thereof, and hermetically sealing the lower opening of the baking vertical vessel with the lid member; heating an atmosphere in the baking vertical vessel; and supplying a baking gas containing a hydrogen chloride gas and a gas for enhancing reactivity of the hydrogen chloride gas, into the baking vertical vessel.

摘要翻译： 本发明是一种用于烘焙第一石英产品和第二石英产品以去除其中所含金属的石英产品烘烤方法，第一和第二石英产品将被加载到用于热处理半导体的热处理设备中 基板，使得每个石英产品的至少一部分与热处理装置的热处理气氛接触，所述石英产品烘焙方法包括以下步骤：使用包括第一夹具元件的夹具 以及第二夹具元件，其以层状方式可分离地堆叠，将所述第一石英产品放置在所述第一夹具元件上，将所述第二夹具元件堆叠在所述第一夹具元件上，并将所述第二石英产品放置在所述第二夹具构件上; 将其中石英产品以层状的方式放置在盖构件上，升高盖构件，通过其下开口将夹具装载到烘烤垂直容器中，并将烘烤垂直的下开口气密地密封 具有盖构件的容器; 加热烘烤垂直容器中的气氛; 并将含有氯化氢气体和用于提高氯化氢气体的反应性的气体的烘烤气体供给到烘烤立式容器中。