公开(公告)号：US20120042926A1

公开(公告)日：2012-02-23

申请号：US13212395

申请日：2011-08-18

申请人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

发明人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

IPC分类号： H01L31/05 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0504 ,  Y02E10/548

摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

摘要翻译： 通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块 并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置 如在半导体层等中形成的。

公开(公告)号：US09214587B2

公开(公告)日：2015-12-15

申请号：US13212395

申请日：2011-08-18

申请人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

发明人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/02 ,  H01L31/05 ,  H01L31/046

CPC分类号： H01L31/075 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0504 ,  Y02E10/548

摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

摘要翻译： 通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块 并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置 如在半导体层等中形成的。