公开(公告)号：US20070166219A1

公开(公告)日：2007-07-19

申请号：US11470954

申请日：2006-09-07

申请人： Nobuhiro Arimoto ,  Kazuo Nishioka ,  Shingo Kizaki ,  Tadashi Ogasawara ,  Makoto Fujita

发明人： Nobuhiro Arimoto ,  Kazuo Nishioka ,  Shingo Kizaki ,  Tadashi Ogasawara ,  Makoto Fujita

IPC分类号： C01B33/113

CPC分类号： C23C14/243 ,  C01B33/113 ,  C23C14/10 ,  C23C14/24

摘要： A high-purity silicon monoxide vapor deposition material which, in the formation of a film by vapor deposition, is effective in inhibiting splashing, and which has an average bulk density of 2.0 g/cml and a Vickers hardness of 500 or higher; a process for producing a high-purity silicon monoxide vapor deposition material consisting of SiO and metal impurities as the remainder, the total amount of the impurities being, 50 ppm or smaller, which comprises conducting a degassing, treatment in a raw-material chamber at a temperature lower than the sublimation temperature of silicon monoxide, raising the temperature to sublimate silicon monoxide, and depositing the silicon monoxide on a substrate in a deposition chamber. and a raw material for the silicon monoxide vapor deposition material which comprises silicon metal particles and silicon dioxide particles, the average particle size of each particulate material being I to 40 μm and/or the two particulate

摘要翻译： 通过气相沉积形成膜的高纯度一氧化硅气相沉积材料有效地防止飞溅，平均堆积密度为2.0g / cm 3，维氏硬度为500或更高; 制备由SiO和金属杂质构成的高纯度一氧化硅气相沉积材料作为其余部分的方法，所述杂质的总量为50ppm以下，其包括在原料室中进行脱气处理 温度低于一氧化硅的升华温度，升高温度以升温一氧化硅，并将一氧化硅沉积在沉积室中的基板上。 以及包含硅金属颗粒和二氧化硅颗粒的一氧化硅气相沉积材料的原料，每个颗粒材料的平均粒度为I至40μm和/或两个颗粒

公开(公告)号：US20090107294A1

公开(公告)日：2009-04-30

申请号：US12299854

申请日：2007-03-22

申请人： Kazuo Nishioka ,  Makoto Fujita ,  Nobuhiro Arimoto

发明人： Kazuo Nishioka ,  Makoto Fujita ,  Nobuhiro Arimoto

IPC分类号： B22F9/08

CPC分类号： C22C14/00 ,  B22F9/082 ,  B22F2009/043 ,  C22C1/06 ,  C22C21/00 ,  C22F1/183

摘要： In production of a titanium alloy spherical powder by a gas atomizing method, the difference in alloy composition depending on the product particle size is reduced economically. To achieve this, sponge titanium particles and additive metal element particles are mixed by means of a mixer having a pulverizing function such as a ball mill. The mixed particles are compressed to form a rod-formed raw material for melting. The formed rod-formed raw material for melting is powderized by a gas atomizing method. In the mixing step, the additive metal element particles are pulverized, or ground depending on the kind of particles, and solidly adhered to the surface of the sponge titanium particles, so that uniform mixing is possible.

摘要翻译： 在通过气体雾化法生产钛合金球形粉末时，经济地降低了根据产品粒度的合金组成的差异。 为了实现这一点，海绵钛颗粒和添加金属元素颗粒通过具有粉碎功能的混合器如球磨机混合。 将混合的颗粒压缩以形成用于熔化的棒状原料。 通过气体雾化法将形成的棒状熔融原料粉化。 在混合步骤中，添加金属元素颗粒根据颗粒的种类被粉碎或研磨，并牢固地附着在海绵钛颗粒的表面上，使得均匀混合是可能的。

公开(公告)号：US07014722B1

公开(公告)日：2006-03-21

申请号：US10048974

申请日：2000-08-10

申请人： Nobuhiro Arimoto ,  Tadashi Ogasawara ,  Isao Uemura ,  Youji Mitani ,  Takashi Oonishi

发明人： Nobuhiro Arimoto ,  Tadashi Ogasawara ,  Isao Uemura ,  Youji Mitani ,  Takashi Oonishi

IPC分类号： C22C14/00 ,  C21D8/10

CPC分类号： C22F1/183 ,  B21J1/02 ,  C23C14/3414

摘要： In finifsh-cogging a high-purity titanium material into a cylindrical form as the final shape, if cylindrical cogging is performed in all stages of warm forging or if cylindrical cogging is performed in the initial stage of the warm forging, there is no need of peripherally restricting the cylindrical cogging material, so that even if longitudinal upset-forging is effected with an upsetting ratio of 2, the condition that the major diameter/minor diameter ratio of the section after forging is not more than 1.01 can be satisfied, developing superior upset-forgeability. This makes it possible, in producing disk-like targets for sputtering, to minimize cutting loss produced during the rolling and machining and to maximize the yield of products; therefore, the material can be widely used as a semiconductor material for electrodes and the like using a high-purity titanium material.

摘要翻译： 在将高纯度钛材料精加工成圆柱形作为最终形状时，如果在锻造的所有阶段进行圆柱形齿槽，或者在锻造的初始阶段执行圆柱形齿槽，则不需要 周边地限制圆筒形齿槽材料，使得即使纵向镦锻锻造以镦锻比为2进行，也可以满足锻造后的长径/小径比不大于1.01的条件，显影性优异 不安的可锻性 这使得在制造用于溅射的圆盘状目标中可以最小化在轧制和机械加工期间产生的切割损失并最大化产品的产量; 因此，该材料可以广泛用作使用高纯度钛材料的电极等的半导体材料。