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公开(公告)号：US20130002882A1
公开(公告)日：2013-01-03
申请号：US13611586
申请日：2012-09-12
CPC分类号： H04N5/2354 , G01S7/4863 , G01S17/87 , G01S17/89 , H04N5/2353 , H04N5/332 , H04N9/045 , H04N2209/045
摘要： The image-capturing device according to the present invention includes a solid-state imaging element, an infrared LED which emits infrared light, a light-emission controlling unit which causes the infrared LED to emit infrared pulsed light on a per frame time basis, and a signal processing unit which extracts, from the solid-state imaging element, a color visible-light image signal in synchronization with a non-emitting period and an infrared image signal in synchronization with an emitting period of the infrared LED. The solid-state imaging element includes an image-capturing region in which unit-arrays are two-dimensionally arranged, and each of the unit-arrays has a pixel for receiving green visible light and infrared light, a pixel for receiving red visible light and infrared light, a pixel for receiving blue visible light and infrared light, and a pixel for receiving infrared light.
摘要翻译： 根据本发明的图像捕获装置包括：固态成像元件，发射红外光的红外LED;发射控制单元，其使得红外线LED在每帧时间基础上发射红外脉冲光;以及 信号处理单元，其与红外LED的发光周期同步地从固态成像元件提取与非发光周期同步的彩色可见光图像信号和红外图像信号。 固态成像元件包括其中单元阵列被二维布置的图像捕获区域，并且每个单位阵列具有用于接收绿色可见光和红外光的像素，用于接收红色可见光的像素和 红外光，用于接收蓝色可见光和红外光的像素，以及用于接收红外光的像素。
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公开(公告)号：US08243176B2
公开(公告)日：2012-08-14
申请号：US12602747
申请日：2009-06-02
申请人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
发明人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14647 , H04N5/332
摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.
摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。
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公开(公告)号：US20100220228A1
公开(公告)日：2010-09-02
申请号：US12602747
申请日：2009-06-02
申请人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
发明人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14647 , H04N5/332
摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.
摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。
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