公开(公告)号：US20090233109A1

公开(公告)日：2009-09-17

申请号：US11886877

申请日：2006-03-29

申请人： Keiichi Okabe ,  Yoshikazu Tachikawa ,  Susumu Miyazaki ,  Sigeyuki Yoshizawa ,  Tokio Takei

发明人： Keiichi Okabe ,  Yoshikazu Tachikawa ,  Susumu Miyazaki ,  Sigeyuki Yoshizawa ,  Tokio Takei

IPC分类号： B24B49/04 ,  H01L21/66 ,  B24B49/12 ,  B32B9/00

CPC分类号： B24B7/228 ,  B24B49/12 ,  H01L21/3212 ,  H01L21/76256 ,  H01L22/26 ,  Y10T428/31663

摘要： The present invention is a method for producing a bonded wafer, comprising at least: bonding a base wafer serving as a support substrate to a bond wafer made of a silicon single crystal via an insulator film or directly bonding the wafers to provide a bonded wafer; and reducing a thickness of the bond wafer to form a thin film made of the silicon single crystal on the base wafer, wherein the thickness of the bonded wafer is reduced based on at least surface grinding while measuring the thickness of the bond wafer, and surface grinding with respect to the bond wafer is stopped when the thickness of the bond wafer reaches a target thickness. As a result, the method for producing a bonded wafer enabling a silicon single crystal thin film to precisely have a desired film thickness, a bonded wafer, and a surface grinding machine enabling a silicon single crystal thin film to precisely have a desired film thickness are provided.

摘要翻译： 本发明是一种用于制造接合晶片的方法，至少包括：通过绝缘膜将用作支撑衬底的基底晶片接合到由硅单晶制成的接合晶片上，或直接接合晶片以提供接合晶片; 并且减小接合晶片的厚度以在基底晶片上形成由单晶硅制成的薄膜，其中，至少基于表面研磨减少接合晶片的厚度，同时测量接合晶片的厚度和表面 当接合晶片的厚度达到目标厚度时，停止对接合晶片的研磨。 结果，能够使硅单晶薄膜精确地具有期望的膜厚的接合晶片的制造方法，接合晶片和能够使硅单晶薄膜精确地具有期望的膜厚度的表面研磨机， 提供。

公开(公告)号：US20080315349A1

公开(公告)日：2008-12-25

申请号：US11883816

申请日：2005-11-02

申请人： Tokio Takei ,  Sigeyuki Yoshizawa ,  Susumu Miyazaki ,  Isao Yokokawa ,  Nobuhiko Noto

发明人： Tokio Takei ,  Sigeyuki Yoshizawa ,  Susumu Miyazaki ,  Isao Yokokawa ,  Nobuhiko Noto

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/6708 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/31111

摘要： The present invention provides a method for manufacturing a bonded wafer prepared by bonding a base wafer and a bond wafer, comprising at least a step of etching an oxide film in a terrace region in an outer periphery of the bonded wafer wherein the oxide film in the terrace region is etched by spin-etching with holding and spinning the bonded wafer. Thereby, there is provided a method for manufacturing a bonded wafer in which an oxide film formed in a terrace region of a base wafer is efficiently etched without removing an oxide film on the back surface of the base wafer.

摘要翻译： 本发明提供一种制造通过粘接基底晶片和接合晶片制备的接合晶片的方法，该方法至少包括在接合晶片的外周中的平台区域中蚀刻氧化物膜的步骤，其中， 通过旋转蚀刻蚀刻露台区域，保持和旋转接合的晶片。 因此，提供了一种用于制造接合晶片的方法，其中，在基片的背面没有去除氧化膜的情况下，有效地蚀刻形成在基底晶片的平台区域中的氧化膜。