公开(公告)号：US09559680B2

公开(公告)日：2017-01-31

申请号：US14522838

申请日：2014-10-24

Applicant: Keithley Instruments, Inc.

Inventor： Kyle K. Rakes

IPC: H03K17/0412 ,  H03K17/687 ,  H03K17/689 ,  H03K17/0416 ,  H03K17/785 ,  H03K17/081

CPC classification number: H03K17/04123 ,  H03K17/04163 ,  H03K17/08104 ,  H03K17/6871 ,  H03K17/6877 ,  H03K17/689 ,  H03K17/785

Abstract: A circuit structured to drive an isolated high speed voltage metal-oxide-semiconductor field-effect transistor (MOSFET) switch, including a first MOSFET and a second MOSFET configured to operate as a switch, a capacitor, a charging component in parallel with the capacitor, a first switch in series with the charging component, and a second switch in parallel with the charging component and the capacitor. The stored voltage in the capacitor is sent to the gates of the first MOSFET and the second MOSFET when a second switch is open and a first switch is closed.

Abstract translation: 一种构造成驱动隔离的高速度电压的金属氧化物半导体场效应晶体管（MOSFET）开关的电路，包括配置为用作开关的第一MOSFET和第二MOSFET，电容器，与电容器并联的充电元件 ，与充电部件串联的第一开关，以及与充电部件和电容器并联的第二开关。 当第二开关断开并且第一开关闭合时，电容器中存储的电压被发送到第一MOSFET和第二MOSFET的栅极。

公开(公告)号：US20150222257A1

公开(公告)日：2015-08-06

申请号：US14522838

申请日：2014-10-24

Applicant: Keithley Instruments, Inc.

Inventor： Kyle K. Rakes

IPC: H03K17/0412 ,  H03K17/689 ,  H03K17/687

CPC classification number: H03K17/04123 ,  H03K17/04163 ,  H03K17/08104 ,  H03K17/6871 ,  H03K17/6877 ,  H03K17/689 ,  H03K17/785

Abstract: A circuit structured to drive an isolated high speed voltage metal-oxide-semiconductor field-effect transistor (MOSFET) switch, including a first MOSFET and a second MOSFET configured to operate as a switch, a capacitor, a charging component in parallel with the capacitor, a first switch in series with the charging component, and a second switch in parallel with the charging component and the capacitor. The stored voltage in the capacitor is sent to the gates of the first MOSFET and the second MOSFET when a second switch is open and a first switch is closed.

Abstract translation: 一种构造成驱动隔离的高速度电压的金属氧化物半导体场效应晶体管（MOSFET）开关的电路，包括配置为用作开关的第一MOSFET和第二MOSFET，电容器，与电容器并联的充电元件 ，与充电部件串联的第一开关，以及与充电部件和电容器并联的第二开关。 当第二开关断开并且第一开关闭合时，电容器中存储的电压被发送到第一MOSFET和第二MOSFET的栅极。