公开(公告)号：US20120208365A1

公开(公告)日：2012-08-16

申请号：US13334213

申请日：2011-12-22

申请人： Kenichiro KURAHASHI ,  Hidetoshi Koyama ,  Kazuyuki Onoe

发明人： Kenichiro KURAHASHI ,  Hidetoshi Koyama ,  Kazuyuki Onoe

IPC分类号： H01L21/28

CPC分类号： H01L21/28264 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66446 ,  H01L29/7787

摘要： A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an opening, forming a hardened layer on an inner circumference of the resist by attaching a pattern shrinking agent to the resist, the pattern shrinking agent undergoing a cross-linking reaction with the resist, etching the insulating film using the resist and the hardened layer as masks, removing the hardened layer, and forming a metal layer on a surface of the semiconductor layer, on a surface of the insulating film, and on a surface of the resist. The method further includes removing the resist and the portion of the metal layer on the surface of the resist by lift-off.

摘要翻译： 一种制造半导体器件的方法包括在半导体层的表面上形成绝缘膜，在绝缘膜的表面上形成抗蚀剂，所述抗蚀剂具有开口，通过附着在所述抗蚀剂的内周上形成硬化层 图案收缩剂到抗蚀剂，图案收缩剂与抗蚀剂进行交联反应，使用抗蚀剂和硬化层作为掩模蚀刻绝缘膜，去除硬化层，以及在表面上形成金属层 半导体层，在绝缘膜的表面上和抗蚀剂的表面上。 该方法还包括通过剥离去除抗蚀剂和抗蚀剂表面上金属层的部分。

公开(公告)号：US08524601B2

公开(公告)日：2013-09-03

申请号：US13334213

申请日：2011-12-22

申请人： Kenichiro Kurahashi ,  Hidetoshi Koyama ,  Kazuyuki Onoe

发明人： Kenichiro Kurahashi ,  Hidetoshi Koyama ,  Kazuyuki Onoe

IPC分类号： H01L21/302

CPC分类号： H01L21/28264 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66446 ,  H01L29/7787

摘要： A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an opening, forming a hardened layer on an inner circumference of the resist by attaching a pattern shrinking agent to the resist, the pattern shrinking agent undergoing a cross-linking reaction with the resist, etching the insulating film using the resist and the hardened layer as masks, removing the hardened layer, and forming a metal layer on a surface of the semiconductor layer, on a surface of the insulating film, and on a surface of the resist. The method further includes removing the resist and the portion of the metal layer on the surface of the resist by lift-off.

摘要翻译： 一种制造半导体器件的方法包括在半导体层的表面上形成绝缘膜，在绝缘膜的表面上形成抗蚀剂，所述抗蚀剂具有开口，通过附着在所述抗蚀剂的内周上形成硬化层 图案收缩剂到抗蚀剂，图案收缩剂与抗蚀剂进行交联反应，使用抗蚀剂和硬化层作为掩模蚀刻绝缘膜，去除硬化层，以及在表面上形成金属层 半导体层，在绝缘膜的表面上和抗蚀剂的表面上。 该方法还包括通过剥离去除抗蚀剂和抗蚀剂表面上金属层的部分。