公开(公告)号：US07849426B2

公开(公告)日：2010-12-07

申请号：US11931144

申请日：2007-10-31

申请人： Kenneth J. Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Paul S. Zuchowski

IPC分类号： G06F17/50 ,  G01R31/26

CPC分类号： G06F17/5063

摘要： The embodiments of the invention provide a design structure for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.

摘要翻译： 本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的设计结构。 提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。 还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。 此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。 控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

公开(公告)号：US20090113358A1

公开(公告)日：2009-04-30

申请号：US11931144

申请日：2007-10-31

申请人： Kenneth J. Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Paul S. Zuchowski

IPC分类号： G06F17/50

CPC分类号： G06F17/5063

摘要： The embodiments of the invention provide a design structure for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.

摘要翻译： 本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的设计结构。 提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。 还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。 此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。 控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

公开(公告)号：US08010813B2

公开(公告)日：2011-08-30

申请号：US12051001

申请日：2008-03-19

申请人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

IPC分类号： G06F1/00 ,  G06F11/00

CPC分类号： H03K19/00392

摘要： Disclosed is a design structure for an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

摘要翻译： 公开了一种用于相关联的第一系统的设计结构，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。 第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。 这些重复设备适于在该第二系统内独立地执行相同的功能。 参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许 设备恢复。 状态机可访问的预定策略指示何时以及是否启动切换。

公开(公告)号：US20090150726A1

公开(公告)日：2009-06-11

申请号：US12138480

申请日：2008-06-13

申请人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

IPC分类号： G06F11/30

CPC分类号： G06F11/008

摘要： Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

摘要翻译： 公开了一种方法和相关联的第一系统的实施例，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。 第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。 这些重复设备适于在该第二系统内独立地执行相同的功能。 参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许 设备恢复。 状态机可访问的预定策略指示何时以及是否启动切换。

公开(公告)号：US07437620B2

公开(公告)日：2008-10-14

申请号：US11164646

申请日：2005-11-30

申请人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

IPC分类号： G06F11/00

CPC分类号： G06F11/008

摘要： Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

摘要翻译： 公开了一种方法和相关联的第一系统的实施例，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。 第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。 这些重复设备适于在该第二系统内独立地执行相同的功能。 参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许 设备恢复。 状态机可访问的预定策略指示何时以及是否启动切换。

公开(公告)号：US07793163B2

公开(公告)日：2010-09-07

申请号：US12138480

申请日：2008-06-13

申请人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

IPC分类号： G06F11/00

CPC分类号： G06F11/008

摘要： Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

摘要翻译： 公开了一种方法和相关联的第一系统的实施例，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。 第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。 这些重复设备适于在该第二系统内独立地执行相同的功能。 参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许 设备恢复。 状态机可访问的预定策略指示何时以及是否启动切换。

公开(公告)号：US20080168284A1

公开(公告)日：2008-07-10

申请号：US12051001

申请日：2008-03-19

申请人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

发明人： Kenneth J. Goodnow ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twombly ,  Andrew S. Wienick ,  Paul S. Zuchowski

IPC分类号： G06F1/00

CPC分类号： H03K19/00392

摘要： Disclosed is a design structure for an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

摘要翻译： 公开了一种用于相关联的第一系统的设计结构，用于在存在导致在系统设备内展现性能下降和恢复性能的现象的情况下延长第二系统的产品寿命。 第一系统包括并入第二系统中的重复设备（例如，在共享总线上）。 这些重复设备适于在该第二系统内独立地执行相同的功能。 参考信号发生器，参考信号比较器，功率控制器和状态机组合起来可以适应于基于性能下降的测量来在复制设备之间的第二系统内的相同功能的无缝切换性能，以允许 设备恢复。 状态机可访问的预定策略指示何时以及是否启动切换。

公开(公告)号：US07504847B2

公开(公告)日：2009-03-17

申请号：US11550814

申请日：2006-10-19

申请人： Kenneth J. Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twembly ,  Paul S. Zuchewski

发明人： Kenneth J. Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twembly ,  Paul S. Zuchewski

IPC分类号： G01R31/26

CPC分类号： G01R31/2856 ,  G01R31/2868

摘要： The embodiments of the invention provide an apparatus and method for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.

摘要翻译： 本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的装置和方法。 提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。 还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。 此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。 控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

公开(公告)号：US20080094092A1

公开(公告)日：2008-04-24

申请号：US11550814

申请日：2006-10-19

申请人： Kenneth J Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twembly ,  Paul S. Zuchewski

发明人： Kenneth J Goodnow ,  Douglas W. Kemerer ,  Stephen G. Shuma ,  Oscar C. Strohacker ,  Mark S. Styduhar ,  Peter A. Twembly ,  Paul S. Zuchewski

IPC分类号： G01R31/26

CPC分类号： G01R31/2856 ,  G01R31/2868

摘要： The embodiments of the invention provide an apparatus and method for detection and compensation of negative bias temperature instability (NBTI) induced threshold degradation. A semiconductor device is provided comprising at least one stress device having a voltage applied to its gate node and at least one reference device having a zero gate-to-source voltage. A controller is also provided to configure node voltages of the device and/or the reference device to reflect different regions of device operations found in digital and analog circuit applications. Moreover, the controller measures a difference in current between the stress device and the reference device to determine whether NBTI induced threshold degradation has occurred in the stress device. The controller also adjusts an output power supply voltage of the stress device until a performance of the stress device matches a performance of the reference device to account for the NBTI induced threshold degradation.

摘要翻译： 本发明的实施例提供了用于检测和补偿负偏压温度不稳定性（NBTI）诱导的阈值劣化的装置和方法。 提供一种半导体器件，其包括至少一个应力器件，其具有施加到其栅极节点的电压和至少一个具有零栅极至源极电压的参考器件。 还提供控制器来配置设备和/或参考设备的节点电压以反映在数字和模拟电路应用中发现的设备操作的不同区域。 此外，控制器测量应力装置和参考装置之间的电流差，以确定在应力装置中是否发生了NBTI诱导的阈值劣化。 控制器还调整应力装置的输出电源电压，直到应力装置的性能与参考装置的性能匹配以解决NBTI诱发的阈值劣化。

公开(公告)号：US06271775B1

公开(公告)日：2001-08-07

申请号：US09379821

申请日：1999-08-24

申请人： Glen A. Jaquette ,  Francis A. Kampf ,  Oscar C. Strohacker

发明人： Glen A. Jaquette ,  Francis A. Kampf ,  Oscar C. Strohacker

IPC分类号： H03M700

CPC分类号： H03M13/6312 ,  G06T9/005 ,  H03M7/00 ,  H03M7/3084 ,  H03M13/35

摘要： A method of reducing data expansion during data compression is provided that allows the coding scheme used to compress data to be swapped between two or more coding schemes. Specifically, a coding window is provided that allows analysis of the compression potential of data within the coding window. The data within the coding window then is analyzed to determine the compression potential of the data. If the compression potential of the data exceeds a first predetermined value, the coding scheme used to compress the data within the coding window is swapped from one coding scheme to another. Preferably the first predetermined value is programmable and is related to the bit cost required to swap back and forth between coding schemes. The two preferred coding schemes are ALDC Lempel-Ziv 1 coding and a pass-through coding scheme wherein raw data is passed unencoded.

摘要翻译： 提供了一种在数据压缩期间减少数据扩展的方法，其允许用于压缩在两个或多个编码方案之间交换的数据的编码方案。 具体地，提供了编码窗口，其允许分析编码窗口内的数据的压缩电位。 然后分析编码窗口内的数据以确定数据的压缩潜力。 如果数据的压缩电势超过第一预定值，则用于压缩编码窗口内的数据的编码方案从一个编码方案交换到另一编码方案。 优选地，第一预定值是可编程的，并且与编码方案之间来回切换所需的位成本相关。 两个优选的编码方案是ALDC Lempel-Ziv 1编码和其中原始数据未经编码的传递编码方案。