公开(公告)号：US06870232B1

公开(公告)日：2005-03-22

申请号：US09550990

申请日：2000-04-17

申请人： Kevin Kok Chan ,  Jack Oon Chu ,  Khalid EzzEldin Ismail ,  Stephen Anthony Rishton ,  Katherine Lynn Saenger

发明人： Kevin Kok Chan ,  Jack Oon Chu ,  Khalid EzzEldin Ismail ,  Stephen Anthony Rishton ,  Katherine Lynn Saenger

IPC分类号： H01L27/095 ,  H01L29/94

CPC分类号： H01L27/095

摘要： A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned.

摘要翻译： 描述了一种场效应晶体管和制造方法，其结合了与肖特基金属对半导体结和T形栅极的自对准源极和漏极接触，或者掺入用于不同于沟道材料的源极和漏极接触的高掺杂半导体材料，以提供 蚀刻选择性和T形栅极或掺入用于源极和漏极接触的金属和用于自对准的栅极电介质的金属的氧化物。

公开(公告)号：US6096590A

公开(公告)日：2000-08-01

申请号：US107738

申请日：1998-06-30

申请人： Kevin Kok Chan ,  Jack Oon Chu ,  Khalid EzzEldin Ismail ,  Stephen Anthony Rishton ,  Katherine Lynn Saenger

发明人： Kevin Kok Chan ,  Jack Oon Chu ,  Khalid EzzEldin Ismail ,  Stephen Anthony Rishton ,  Katherine Lynn Saenger

IPC分类号： H01L29/872 ,  H01L27/095 ,  H01L29/47 ,  H01L29/78 ,  H01L21/8238

CPC分类号： H01L21/28114 ,  H01L27/095

摘要： A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned. The invention overcomes the problem of self-aligned high resistance source/drain contacts and a high resistance gate electrode for submicron FET devices which increase as devices are scaled to smaller dimensions.

摘要翻译： 描述了一种场效应晶体管和制造方法，其结合了与肖特基金属对半导体结和T形栅极的自对准源极和漏极接触，或者掺入用于不同于沟道材料的源极和漏极接触的高掺杂半导体材料，以提供 蚀刻选择性和T形栅极或掺入用于源极和漏极接触的金属和用于自对准的栅极电介质的金属的氧化物。 本发明克服了自对准高电阻源极/漏极触点的问题，以及用于亚微米FET器件的高电阻栅电极，随着器件被缩放到更小的尺寸而增加。

公开(公告)号：US5955759A

公开(公告)日：1999-09-21

申请号：US989042

申请日：1997-12-11

申请人： Khalid EzzEldin Ismail ,  Stephen Anthony Rishton ,  Katherine Lynn Saenger

发明人： Khalid EzzEldin Ismail ,  Stephen Anthony Rishton ,  Katherine Lynn Saenger

IPC分类号： H01L21/223 ,  H01L21/265 ,  H01L21/336 ,  H01L29/417 ,  H01L29/72

CPC分类号： H01L29/66477 ,  H01L21/223 ,  H01L21/2652 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66575

摘要： A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a low resistance gate electrode and self-aligned low resistance source/drain contacts suitable for submicron FET devices, and scalable to smaller device dimensions.

摘要翻译： 描述了场效应晶体管及其制造方法，其中场效应晶体管包含T形栅极，源极和漏极接触件与预先存在的浅结区域自对准。 本发明提供了一种低电阻栅电极和适合于亚微米FET器件的自对准低电阻源极/漏极触点，并可扩展到更小的器件尺寸。