摘要:
A circuit includes a complementary current mode logic driver circuit and a dual feedback current mode logic bias circuit. The complementary current mode logic driver circuit provides a first output voltage and a second output voltage. The dual feedback current mode logic bias circuit includes a first feedback circuit and a second feedback circuit. The first feedback circuit provides a first bias voltage for the complementary current mode logic driver circuit in response to the first output voltage. The second feedback circuit provides a second bias voltage in response to the second output voltage.
摘要:
A circuit includes a complementary current mode logic driver circuit and a dual feedback current mode logic bias circuit. The complementary current mode logic driver circuit provides a first output voltage and a second output voltage. The dual feedback current mode logic bias circuit includes a first feedback circuit and a second feedback circuit. The first feedback circuit provides a first bias voltage for the complementary current mode logic driver circuit in response to the first output voltage. The second feedback circuit provides a second bias voltage in response to the second output voltage.
摘要:
A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.
摘要:
Embodiments of an IC protection circuit that protects low voltage supply transistors and circuits within the IC from excessive power supply levels and ESD events are described. A protection circuit situated between the IO pins of the IC and the internal circuitry of the IC includes a voltage drop network and a plurality of shunt circuits to protect the IC against excessive supply voltages and ESD voltages, or other excessive current conditions. Each shunt circuit includes an RC trigger stage and an NMOS shunt stage that are made using low-voltage devices. A protection circuit of the embodiments includes a high voltage IO pin, a voltage drop network to drop a high voltage on the IO pin to a low voltage level on a floating voltage rail, a first shunt circuit coupled between the floating supply rail and ground, an equalizer circuit coupled between the floating supply rail and a low voltage supply rail, and a second shunt circuit coupled to the equalizer circuit through the low voltage supply rail.
摘要:
Embodiments of an IC protection circuit that protects low voltage supply transistors and circuits within the IC from excessive power supply levels and ESD events are described. A protection circuit situated between the IO pins of the IC and the internal circuitry of the IC includes a voltage drop network and a plurality of shunt circuits to protect the IC against excessive supply voltages and ESD voltages, or other excessive current conditions. Each shunt circuit includes an RC trigger stage and an NMOS shunt stage that are made using low-voltage devices. A protection circuit of the embodiments includes a high voltage IO pin, a voltage drop network to drop a high voltage on the IO pin to a low voltage level on a floating voltage rail, a first shunt circuit coupled between the floating supply rail and ground, an equalizer circuit coupled between the floating supply rail and a low voltage supply rail, and a second shunt circuit coupled to the equalizer circuit through the low voltage supply rail.
摘要:
A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.
摘要:
Embodiments of an IC protection circuit that protects low voltage supply transistors and circuits within the IC from excessive power supply levels and ESD events are described. A protection circuit situated between the IO pins of the IC and the internal circuitry of the IC includes a voltage drop network and a plurality of shunt circuits to protect the IC against excessive supply voltages and ESD voltages. Each shunt circuit includes an RC trigger stage and an NMOS shunt stage that are made using low-voltage devices. A protection circuit of the embodiments includes a high voltage IO pin interface, a voltage drop network coupled to the IO pin and comprising a plurality of forward-biased diodes connected in series to drop a high voltage on the IO pin to a low voltage level, an NMOS shunt transistor coupled between the voltage drop network and a ground terminal, and a trigger circuit coupled to the NMOS shunt transistor to activate the shunt transistor when a sensed input voltage rise time is shorter than a defined supply voltage rise time.
摘要:
Embodiments of an IC protection circuit that protects low voltage supply transistors and circuits within the IC from excessive power supply levels and ESD events are described. A protection circuit situated between the IO pins of the IC and the internal circuitry of the IC includes a voltage drop network and a plurality of shunt circuits to protect the IC against excessive supply voltages and ESD voltages. Each shunt circuit includes an RC trigger stage and an NMOS shunt stage that are made using low-voltage devices. A protection circuit of the embodiments includes a high voltage IO pin interface, a voltage drop network coupled to the IO pin and comprising a plurality of forward-biased diodes connected in series to drop a high voltage on the IO pin to a low voltage level, an NMOS shunt transistor coupled between the voltage drop network and a ground terminal, and a trigger circuit coupled to the NMOS shunt transistor to activate the shunt transistor when a sensed input voltage rise time is shorter than a defined supply voltage rise time.
摘要:
A dual function differential driver includes a voltage mode differential driver portion and a current mode differential driver portion. Control circuitry is connected to the voltage mode differential driver portion and the current mode differential driver portion. The control circuitry switches the dual function differential driver between operation as a voltage mode differential driver and operation as a current mode differential driver.
摘要:
A dual function differential driver includes a voltage mode differential driver portion and a current mode differential driver portion. Control circuitry is connected to the voltage mode differential driver portion and the current mode differential driver portion. The control circuitry switches the dual function differential driver between operation as a voltage mode differential driver and operation as a current mode differential driver.