公开(公告)号：US20120097948A1

公开(公告)日：2012-04-26

申请号：US13193463

申请日：2011-07-28

申请人： Jeong-Hwan Kim ,  Ki-Hong Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

发明人： Jeong-Hwan Kim ,  Ki-Hong Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/78621 ,  H01L27/0705 ,  H01L29/41733 ,  H01L29/42384

摘要： A thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulating layer covering the gate electrode, a first semiconductor layer and a second semiconductor layer overlapping the gate electrode on the gate insulating layer and separated from each other, a first source electrode and a first drain electrode on the first semiconductor layer and on opposite sides of the gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer and on opposite sides of the gate electrode, wherein the first source electrode is coupled to the second source electrode through a source connection overlapping the gate electrode, and the first drain electrode is coupled to the second drain electrode, such that the on current and off current characteristics of the thin film transistor may be constantly maintained regardless of alignment error.

摘要翻译： 薄膜晶体管包括衬底，衬底上的栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠并彼此分离的第一半导体层和第二半导体层，第一 源电极和第一漏电极，以及在第二半导体层上和栅电极的相对侧上的第二源电极和第二漏电极，其中第一源电极 通过与栅电极重叠的源极连接而耦合到第二源电极，并且第一漏电极耦合到第二漏电极，使得薄膜晶体管的导通电流和截止电流特性可以恒定地保持，而不管对准 错误。

公开(公告)号：US08476631B2

公开(公告)日：2013-07-02

申请号：US13084357

申请日：2011-04-11

申请人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

发明人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/78609 ,  H01L29/78624 ,  H01L29/78696

摘要： A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.

摘要翻译： 公开了一种具有偏移结构的薄膜晶体管（TFT）。 TFT保持足够低的“截止”电流和足够高的“导通”电流。 TFT包括有源区。 有源区包括栅电极; 与栅电极重叠的有源层; 栅电极和有源层之间的栅极绝缘层; 以及包括电连接到有源区的源极/漏极的源极/漏极电极层。 一些源极/漏极电极部分地与栅电极重叠。 源极/漏极中的其他源极与栅电极偏移。 源极/漏极和栅电极处于对称的布置。

公开(公告)号：US20110297937A1

公开(公告)日：2011-12-08

申请号：US13084357

申请日：2011-04-11

申请人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

发明人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

IPC分类号： H01L29/04

CPC分类号： H01L29/41733 ,  H01L29/78609 ,  H01L29/78624 ,  H01L29/78696

摘要： A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.

摘要翻译： 公开了一种具有偏移结构的薄膜晶体管（TFT）。 TFT保持足够低的“截止”电流和足够高的“导通”电流。 TFT包括有源区。 有源区包括栅电极; 与栅电极重叠的有源层; 栅电极和有源层之间的栅极绝缘层; 以及包括电连接到有源区的源极/漏极的源极/漏极电极层。 一些源极/漏极电极部分地与栅电极重叠。 源极/漏极中的其他源极与栅电极偏移。 源极/漏极和栅电极处于对称的布置。