公开(公告)号：US20120146127A1

公开(公告)日：2012-06-14

申请号：US13403065

申请日：2012-02-23

申请人： Ki-Hong LEE ,  Kwon HONG ,  Dae-Gyu SHIN

发明人： Ki-Hong LEE ,  Kwon HONG ,  Dae-Gyu SHIN

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A nonvolatile memory device includes a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate; a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole; a first blocking layer and a charge trapping and charge storage layer formed on sidewalk of the columnar cell channels; and a second blocking layer formed between the first blocking layer and the plurality of gate electrodes.

摘要翻译： 非易失性存储装置包括具有管道通道孔的管道浇口; 多个层间绝缘层和交替层叠在管栅上的多个栅电极; 一对穿过层间绝缘层和栅电极的柱状电池通道，并且耦合形成在通道孔中的管道; 在柱状细胞通道的人行道上形成的第一阻挡层和电荷俘获和电荷存储层; 以及形成在第一阻挡层和多个栅电极之间的第二阻挡层。