公开(公告)号：US07358588B2

公开(公告)日：2008-04-15

申请号：US11301510

申请日：2005-12-13

申请人： Ki-seog Youn ,  Jong-hyon Ahn ,  Deok-hyung Lee ,  Sung-gun Kang ,  Kong-soo Cheong

发明人： Ki-seog Youn ,  Jong-hyon Ahn ,  Deok-hyung Lee ,  Sung-gun Kang ,  Kong-soo Cheong

IPC分类号： H01L29/00

CPC分类号： H01L21/76224

摘要： A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type semiconductor device includes a semiconductor substrate defined by an active region and a field region, a trench formed in the field region, an oxide layer conformally formed along the inside of the trench, a liner layer conformally formed along the oxide layer, a field insulating layer formed inside the trench including the oxide layer and the liner layer, and a field protection layer formed on the field insulating layer so that a step difference does not occur on the semiconductor substrate.

摘要翻译： 提供其中防止在场区域中形成凹部的沟槽隔离型半导体器件及其制造方法。 沟槽隔离型半导体器件包括由有源区和场区定义的半导体衬底，在场区中形成的沟槽，沿着沟内部保形地形成的氧化物层，沿着氧化物层保形地形成的衬层， 形成在包括氧化物层和衬垫层的沟槽内的场绝缘层，以及形成在场绝缘层上的场保护层，使得半导体衬底上不发生阶差。

公开(公告)号：US20060128114A1

公开(公告)日：2006-06-15

申请号：US11301510

申请日：2005-12-13

申请人： Ki-seog Youn ,  Jong-hyon Ahn ,  Deok-hyung Lee ,  Sung-gun Kang ,  Kong-soo Cheong

发明人： Ki-seog Youn ,  Jong-hyon Ahn ,  Deok-hyung Lee ,  Sung-gun Kang ,  Kong-soo Cheong

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type semiconductor device includes a semiconductor substrate defined by an active region and a field region, a trench formed in the field region, an oxide layer conformally formed along the inside of the trench, a liner layer conformally formed along the oxide layer, a field insulating layer formed inside the trench including the oxide layer and the liner layer, and a field protection layer formed on the field insulating layer so that a step difference does not occur on the semiconductor substrate.

摘要翻译： 提供其中防止在场区域中形成凹部的沟槽隔离型半导体器件及其制造方法。 沟槽隔离型半导体器件包括由有源区和场区定义的半导体衬底，在场区中形成的沟槽，沿着沟内部保形地形成的氧化物层，沿着氧化物层保形地形成的衬层， 形成在包括氧化物层和衬垫层的沟槽内的场绝缘层，以及形成在场绝缘层上的场保护层，使得半导体衬底上不发生阶差。

公开(公告)号：US07795110B2

公开(公告)日：2010-09-14

申请号：US12070808

申请日：2008-02-21

申请人： Ki-seog Youn ,  Jong-hyon Ahn ,  Deok-hyung Lee ,  Sung-gun Kang ,  Kong-soo Cheong

发明人： Ki-seog Youn ,  Jong-hyon Ahn ,  Deok-hyung Lee ,  Sung-gun Kang ,  Kong-soo Cheong

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type semiconductor device includes a semiconductor substrate defined by an active region and a field region, a trench formed in the field region, an oxide layer conformally formed along the inside of the trench, a liner layer conformally formed along the oxide layer, a field insulating layer formed inside the trench including the oxide layer and the liner layer, and a field protection layer formed on the field insulating layer so that a step difference does not occur on the semiconductor substrate.

摘要翻译： 提供其中防止在场区域中形成凹部的沟槽隔离型半导体器件及其制造方法。 沟槽隔离型半导体器件包括由有源区和场区定义的半导体衬底，在场区中形成的沟槽，沿着沟内部保形地形成的氧化物层，沿着氧化物层保形地形成的衬层， 形成在包括氧化物层和衬垫层的沟槽内的场绝缘层，以及形成在场绝缘层上的场保护层，使得半导体衬底上不发生阶差。