公开(公告)号：US09230813B2

公开(公告)日：2016-01-05

申请号：US14250267

申请日：2014-04-10

申请人： Kilopass Technology, Inc.

发明人： Harry Shengwen Luan

IPC分类号： H01L23/535 ,  H01L27/112 ,  H01L21/28 ,  G11C17/16 ,  H01L23/525

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L21/28008 ,  H01L23/5252 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

摘要： A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.

摘要翻译： 由金属绝缘体半导体电池形成的一次可编程非易失性存储器。 电池处于形成在半导体衬底中的导电栅极线和交叉掺杂半导体线的交叉点。

公开(公告)号：US20150311215A1

公开(公告)日：2015-10-29

申请号：US14681852

申请日：2015-04-08

申请人： Kilopass Technology, Inc.

发明人： Harry Shengwen Luan

IPC分类号： H01L27/112 ,  H01L29/66 ,  H01L21/28

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L21/28008 ,  H01L23/5252 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

摘要： A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate.

摘要翻译： 由金属 - 绝缘体半导体单元形成的一次可编程非易失性存储器。 电池处于形成在半导体衬底中的导电栅极线和相交线的交叉点。

公开(公告)号：US20140217484A1

公开(公告)日：2014-08-07

申请号：US14250267

申请日：2014-04-10

申请人： Kilopass Technology, Inc.

发明人： Harry Shengwen Luan

IPC分类号： H01L27/112 ,  H01L21/28

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L21/28008 ,  H01L23/5252 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

摘要： A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.

摘要翻译： 由金属绝缘体半导体电池形成的一次可编程非易失性存储器。 电池处于形成在半导体衬底中的导电栅极线和交叉掺杂半导体线的交叉点。

公开(公告)号：US09887201B2

公开(公告)日：2018-02-06

申请号：US15250831

申请日：2016-08-29

申请人： Kilopass Technology, Inc.

发明人： Harry Shengwen Luan

IPC分类号： H01L27/112 ,  H01L21/28 ,  G11C17/16 ,  H01L23/525 ,  H01L29/66

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L21/28008 ,  H01L23/5252 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

摘要： A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate. Among others, features include forming the gate lines with polysilicon layers of one conductivity type and the intersecting lines with dopants of the opposite conductivity type in the substrate; forming the intersecting lines with differing dopant concentrations near the substrate surface and deeper in the substrate; and forming the widths of the gate lines and intersecting lines with the minimum feature size that can be patterned by a particular semiconductor technology.

公开(公告)号：US20170053927A1

公开(公告)日：2017-02-23

申请号：US15250831

申请日：2016-08-29

申请人： Kilopass Technology, Inc.

发明人： Harry Shengwen Luan

IPC分类号： H01L27/112 ,  G11C17/16 ,  H01L21/28 ,  H01L23/525 ,  H01L29/66

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L21/28008 ,  H01L23/5252 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

摘要： A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate. Among others, features include forming the gate lines with polysilicon layers of one conductivity type and the intersecting lines with dopants of the opposite conductivity type in the substrate; forming the intersecting lines with differing dopant concentrations near the substrate surface and deeper in the substrate; and forming the widths of the gate lines and intersecting lines with the minimum feature size that can be patterned by a particular semiconductor technology.

摘要翻译： 由金属 - 绝缘体半导体单元形成的一次可编程非易失性存储器。 电池处于形成在半导体衬底中的导电栅极线和相交线的交叉点。 其中，特征包括在衬底中形成具有一种导电类型的多晶硅层的栅极线和与衬底中具有相反导电类型的掺杂剂的相交线; 在衬底表面附近形成具有不同掺杂剂浓度的相交线并且在衬底中形成更深的相交线; 以及通过特定的半导体技术可以图案化的最小特征尺寸形成栅极线和相交线的宽度。

公开(公告)号：US09431254B2

公开(公告)日：2016-08-30

申请号：US14681852

申请日：2015-04-08

申请人： Kilopass Technology, Inc.

发明人： Harry Shengwen Luan

IPC分类号： H01L21/8239 ,  H01L27/112 ,  H01L21/28 ,  G11C17/16 ,  H01L23/525 ,  H01L29/66

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L21/28008 ,  H01L23/5252 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

摘要： A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate. Among others, features include forming the gate lines with polysilicon layers of one conductivity type and the intersecting lines with dopants of the opposite conductivity type in the substrate; forming the intersecting lines with differing dopant concentrations near the substrate surface and deeper in the substrate; and forming the widths of the gate lines and intersecting lines with the minimum feature size that can be patterned by a particular semiconductor technology.

摘要翻译： 由金属 - 绝缘体半导体单元形成的一次可编程非易失性存储器。 电池处于形成在半导体衬底中的导电栅极线和相交线的交叉点。 其中，特征包括在衬底中形成具有一种导电类型的多晶硅层的栅极线和与衬底中具有相反导电类型的掺杂剂的相交线; 在衬底表面附近形成具有不同掺杂剂浓度的相交线并且在衬底中形成更深的相交线; 以及通过特定的半导体技术可以图案化的最小特征尺寸形成栅极线和相交线的宽度。