公开(公告)号：US20210074711A1

公开(公告)日：2021-03-11

申请号：US16797331

申请日：2020-02-21

Applicant: Kioxia Corporation

Inventor： Yusaku SUZUKI ,  Kazuhiro NOJIMA ,  Atsuko AIBA

IPC: H01L27/1157 ,  G11C16/04 ,  H01L27/11565

Abstract: A semiconductor memory device according to an embodiment includes a base, a first conductor, a second conductor, a first pillar, a first insulating member, and a first contact. The first conductor is provided in a first layer above the base. The second conductor is provided above the first conductor. The first pillar includes a first portion and a second portion formed by different bodies. The first portion of the first pillar is provided to penetrate the first conductor. The second portion of the first pillar is provided to penetrate the second conductor. The first insulating member is provided at least in the first layer. The first contact is contacting the second conductor above the first insulating member.