公开(公告)号：US20240284677A1

公开(公告)日：2024-08-22

申请号：US18443531

申请日：2024-02-16

Applicant: Kioxia Corporation

Inventor： Chihiro UMEDA ,  Yuta KAMIYA ,  Tomohisa IINO ,  Masaki NOGUCHI ,  Akira TAKASHIMA ,  Yusuke NAKAJIMA

IPC: H10B43/30 ,  H10B43/27

CPC classification number: H10B43/30 ,  H10B43/27

Abstract: A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; a charge storage layer extending along a side surface of the second insulating film with a third insulating film interposed therebetween; and a semiconductor layer extending along a side surface of the charge storage layer with a fourth insulating film interposed therebetween. A hydrogen concentration in the fourth insulating film is equal to or higher than a hydrogen concentration in the charge storage layer, which is equal to or higher than a hydrogen concentration in the third insulating film, which is equal to or higher than a hydrogen concentration in the second insulating film.