-
1.发明申请公开(公告)号：US20200265910A1
公开(公告)日：2020-08-20
申请号：US16866483
申请日：2020-05-04
Applicant: Kioxia Corporation
Inventor： Avi STEINER , Hanan WEINGARTEN , Yasuhiko KUROSAWA
Abstract: The present embodiments relate to methods for maintaining steady and high performance programming of non-volatile memory devices such as NAND-type flash devices. According to certain aspects, embodiments provide adaptive control of programming parameters over the lifespan of a NAND flash device so as to maintain write performance and obtain high endurance.
Search Results
1
records
(took 0.012 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
