公开(公告)号：US20230413555A1

公开(公告)日：2023-12-21

申请号：US18177734

申请日：2023-03-02

Applicant: Kioxia Corporation

Inventor： Hiroki KITAYAMA ,  Tomotaka ARIGA ,  Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H10B43/27 ,  H10B41/27

CPC classification number: H10B43/27 ,  H10B41/27

Abstract: According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulation film on the charge storage layer. A conductor layer extends in a second direction intersecting the first direction to meet a portion of the memory pillar. The conductor layer includes a first layer comprising molybdenum and a second layer comprising tungsten. The first layer is between the memory pillar and the second layer in the second direction.

公开(公告)号：US20230046783A1

公开(公告)日：2023-02-16

申请号：US17550062

申请日：2021-12-14

Applicant: Kioxia Corporation

Inventor： Hiroki KITAYAMA ,  Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L23/535 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.